A New Triclinic Defect in Neutron-Irradiated Fz-Silicon Grown in Hydrogen

E WU,SX WU,JC MAO,GG QIN

1986-01-01

Chinese Physics

Abstract:EPR was utilized to study the defects in neutron-irradiated FZ-Si grown in hydrogen. A new triclinic symmetry defect has been observed. The principal values and the direction cosines of the g tensor were determined. The theoretical calculation was found to be in close agreement with the experimental data.

What problem does this paper attempt to address?

An EPR study on a new triclinic symmetry defect in neutron-irradiated FZ-silicon

Wu En,Wu Shu-xian,Mao Jin-Chang,Yan Mao-Xun,Qin Guo-gang

DOI: https://doi.org/10.1016/0038-1098(87)90030-5

IF: 1.934

1987-01-01

Solid State Communications

Abstract:A new defect, labled as Si-PK1, has been observed with EPR (Electron Paramagnetic Resonance) in neutron irradiated FZ-Si grown in argon, hydrogen and vacuum. Its symmetry has been determined to be triclinic symmetry, the lowest possible symmetry. Si-PK1 has not been observed in CZ-Si. It is not related to any common impurities in Si, like oxygen, carbon, phosphorus and boron, and it should be an intrinsic defect. Combining with the empirical classification of g tensor, it is concluded that Si-PK1 may be a multi-vacancy cluster.
An Electron-Paramagnetic-Res Study On A New C2 Symmetry Defect In Neutron-Irradiated Silicon

E Wu,Jc Mao,Sx Wu,Mx Yan,Gg Qin

DOI: https://doi.org/10.1016/0375-9601(86)90322-1

IF: 2.707

1986-01-01

Physics Letters A

Abstract:A new defect, labeled Si-PK4, has been observed with EPR in neutron-irradiated FZ-silicon grown in argon. Its g tensor reveals that Si-PK4 has monoclinic-II symmetry (C2 point group) with one symmetry axis pointing to 〈100〉. According to the empirical classification of g tensors and the results of FTIR (Fourier transform infrared absorption) measurement, it is suggested that Si-PK4 may be a carbon-related defect.
An EPR study of a new C2 symmetry defect in neutron-irradiated silicon

e wu,j c mao,s x wu,m x yan,g g qin

DOI: https://doi.org/10.1016/0375-9601(86)90322-1

IF: 2.707

1986-01-01

Physics Letters A

Abstract:A new defect, labeled Si-PK4, has been observed with EPR in neutron-irradiated FZ-silicon grown in argon. Its g tensor reveals that Si-PK4 has monoclinic-II symmetry (C2 point group) with one symmetry axis pointing to 〈100〉. According to the empirical classification of g tensors and the results of FTIR (Fourier transform infrared absorption) measurement, it is suggested that Si-PK4 may be a carbon-related defect.
Advanced Numerical Characterization of Mono-Crystalline Copper with Defects

H. F. Zhan,Y. T. Gu,P. K. D. V. Yarlagadda

DOI: https://doi.org/10.1166/asl.2011.1496

2011-01-01

Advanced Science Letters

Abstract:Based on the embedded atom method (EAM) and molecular dynamics (MD) method, the mono-crystalline copper with different defects is investigated through tension and nanoindentation simulation. The single-crystal copper nanowire with surface defects is firstly studied through tension. For validation, the tension simulations for nanowire without defect are carried out under different temperatures and strain rates. The defects on nanowires are then systematically studied in considering different defects orientation distribution. It is found that the Young’s modulus is insensitive of surface defects and centro-plane defects. However, the yield strength and yield point show a significant decrease due to the different defects. Specially, the 〖45〗^° defect in surface and in (200) plane exerts the biggest influence to the yield strength, about 34.20% and 51.45% decrease are observed, respectively. Different defects are observed to serve as a dislocation source and different necking positions of the nanowires during tension are found. During nanoindentation simulation, dislocation is found nucleating below the contact area, but no obvious dislocation is generated around the nano-cavity. Comparing with the perfect substrate during nanoindentation, the substrate with nano-cavities emerged less dislocations, it is supposed that the nano-cavity absorbed part of the indent energy, and less plastic deformation happened in the defected substrate.
An Epr Study on Proton-Implanted Defect in Fz-Silicon

E WU,XC XI,XT LU,DY SHEN,XM WANG,GG QIN

1992-01-01

Abstract:A new EPR defect (labeled Si-PK5) and two previously known defects (Si-S1 and Si-S2) are observed in proton-implanted N-type FZ-lilicon. Our results indicate that Si-PK5 has trigonal symmetry with the <111> direction as its symmetry axis. Its paramagnetic parameters are S = 1/2, g(parallel-to) = 2.0078 and g(perpendicular-to) = 2.0174. According to the empirical methods of classifying defects given by Lee and Corbett and by Sieverts. Si-Pk5 presumably has the structure of bond-centered interstitial. As for Si-S2, the hyperfine splitting of one equivalent Si-29 has been observed for the first time.
DEEP LEVEL DEFECTS RELATED TO HYDROGEN IN NEUTRON IRRADIATED SILICON CONTAINING HYDROGEN

YC DU,YF ZHANG,GG QIN,XT MENG

DOI: https://doi.org/10.7498/aps.33.477

1985-01-01

Abstract:The interaction between hydrogen and defects in neutron irradiated n-type FZ silicon has been studied with deep level transient spectroscopy, transient capacitance at constant temperature and infrared absorption spectroscopy. It has been observed that the absorption peaks of infrared spectroscopy corresponding to the interstitial hydrogen reduce after neutron irradiation. In the unannealed neutron irradiated n-type FZ silicon grown in hydrogen, a new defect-Z center has been observed for the first time. Because the energy level of the Z center (Ec-0.20 eV) is very close to the energy level of the A center (Ec-0.16 eV) and the concentration of the former is much lower than that of the latter. In order to detect the Z center, neutron dose has been selected so that the Fermi level locates at several kT below the energy level of A center. In all probability the Z center is a hydrogen-vacancy complex. The possible electron structure of this center is discussed.
Defects in nitrogen-doped multicrystalline silicon

Deren Yang,Dongsheng Li,M. Ghosh,H.J. Möller

DOI: https://doi.org/10.1016/j.physb.2003.10.027

2004-01-01

Abstract:The cast multicrystalline silicon (mc-Si) grown by directional solidification in silicon nitride-coated silica crucibles has been investigated by means of the Fourier transmission infrared spectroscopy technique. An infrared absorption band at 1206cm−1 was found in the specimens, which were located at the top center position of a mc-Si ingot. The defect was very stable during annealing up to 24h in the temperature range 450–1150°C. The results of deep level transition spectroscopy experiments showed that no deep energy level was directly linked to the defect. The possible origin of the new defect and its influence on solar cells are discussed. This defect is suggested to be associated with the formation of boron–nitrogen complexes.
Role of Nitrogen Related Complexes in the Formation of Defects in Silicon

A Karoui,FS Karoui,A Kvit,GA Rozgonyi,D Yang

DOI: https://doi.org/10.1063/1.1462874

IF: 4

2002-01-01

Applied Physics Letters

Abstract:Defect size and density distributions were obtained as a function of depth in nitrogen doped CZ silicon (N-CZ) following Hi–Lo–Hi and Lo–Hi annealing, using an oxygen precipitate profiler. The defects were also delineated by Wright etching and Nomarski optical microscopy on both cleaved and bevel polished samples. In addition to the enhanced precipitation and absence of voids previously reported for N-CZ Si, an unexpected mode of precipitation has been found near the annealed wafer surface, just above the traditional denuded zone. This oxynitride precipitate is discussed with regard to N-related complex interactions and point defect supersaturations/injection. High resolution transmission electron microscopy revealed that most precipitates have an octahedral shape with two distinct amorphous phases, which reflect a transition from an initial phase containing both N and O to one with primarily O, as verified with Z-contrast TEM and electron energy loss spectroscopy.
Defect structure of nitrogen doped czochralski silicon annealed under enhanced pressure

Andrzej Misiuk,Wojciech K. Wierzchowski,Krzysztof Wieteska,Charalampos A. Londos,Andreas Andrianakis,Jadwiga Ba̧k-Misiuk,Deren Yang,Barbara Surma

DOI: https://doi.org/10.12693/aphyspola.117.344

2010-01-01

Acta Physica Polonica A

Abstract:Defect structure of Czochralski grown silicon (Cz-Si) with nitrogen admixture, cN ≤ 5 × 1014 cm-3 (Cz-Si:N), annealed for up to 10 h at 1270-1400 K under hydrostatic Ar pressure ≤ 1.1 GPa, was investigated by synchrotron diffraction topography (HASYLAB, Germany), X-ray reciprocal space mapping, and infrared spectroscopy. Extended defects were not detected in Cz-Si:N processed at up to 1270 K. Such defects were created, however, in Cz-Si:N pre-annealed at 923 K and next processed at 1270 K or in as-grown Cz-Si:N processed at 1400 K. Investigation of temperature-pressure effects in nitrogen-doped silicon contributes to the understanding of defect formation in Cz-Si:N.
Oxygen Precipitation in Nitrogen Doped Czochralski Silicon Wafers. I. Formation Mechanisms of Near-Surface and Bulk Defects

A Karoui,FS Karoui,GA Rozgonyi,D Yang

DOI: https://doi.org/10.1063/1.1773921

IF: 2.877

2004-01-01

Journal of Applied Physics

Abstract:Defect size distributions in nitrogen-doped Czochralski (N-CZ) silicon wafers were obtained using an oxygen precipitate profiler and Wright-Jenkins etching. These showed unique depth dependence in low-high and high-low-high cycled N-CZ wafers. Unique phenomena observed include a high defect concentration at the subsurface that decreases within the top 2μm of the so-called denuded zone. In contrast to N-free CZ Si for which the first high step annealing dissolves the grown-in defects, these appeared to be stable in N-CZ Si. As a result, the defect size distribution in the bulk was found to be independent of the annealing cycle. It was also found that the depth dependent defect concentration correlates well with oxygen and strongly with nitrogen secondary ion mass spectroscopy profiles, suggesting that nitrogen is the leading impurity in the defect formation processes even though introduced at very low concentration. Nitrogen appeared to effectively modify the nucleation regime by a drastic increase of the nuclei density. At low temperature under external stress, nitrogen and oxygen cosegregate to the surface where the stress is applied; such a phenomenon is largely increased at high temperature.
Three Kinds of Hydrogen-Related Electron Irradiated Defects in Silicon Grown in Hydrogen

Hua Zong-lu,Qin Guo-gang,Zhou Jie

DOI: https://doi.org/10.1088/0256-307x/2/1/012

1985-01-01

Abstract:We have identified three kinds of hydrogen-related (HR) irradiated defects in Si crystals grown in H atmosphere. They are located at 0.08eV and 0.20eV below the conduction band and 0.10eV above the valance band respectively. Because they have different annealing temperatures, they are not the different charged states of the same defect center but correspond to different centers.
Electron Irradiation Induced Defects In Germanium-Doped Czochralski Silicon Substrates And Diodes

Jiahe Chen,Jan Vanhellemont,Eddy Simoen,Johan Lauwaert,Henk Vrielinck,Joan Marc Rafi,Hidenori Ohyama,Joerg Weber,Deren Yang

DOI: https://doi.org/10.1002/pssc.201000142

2011-01-01

Abstract:Ge doping in Czochralski silicon (Cz-Si) crystal has been proposed as a successful application of the so-called "impurity engineering" leading to improved properties of Si wafers and/or devices. In an attempt to understand the beneficial effect of Ge doping on irradiation hardness for actual devices, substrates and p-on-n diodes, both with and without Ge doping, were exposed to electron irradiation and characterized using deep level transient spectroscopy (DLTS). Our results suggest a concentration of 10(19) cm(-3) Ge doping has only a limited effect on the total density of vacancy related deep levels in silicon. (C) 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
Extended Defects in Nitrogen-Doped Czochralski Silicon During Diode Process

Jia‐Zhuang Xu,Xiangyang Ma,Lu Jiang,Chunlong Li,Deren Yang

DOI: https://doi.org/10.1016/j.physb.2003.11.093

2004-01-01

Abstract:The extended defects in nitrogen-doped Czochralski (NCZ) silicon and conventional Czochralski (CZ) silicon during the diode process were systematically investigated by means of optical microscopy and transmission electron microscopy. It was revealed that during the phosphorous diffusion (1230°C/2 h), the dislocations and stacking faults generated simultaneously in the NCZ silicon while in the CZ silicon only dislocations were observed. After the boron diffusion (1260°C/30 h), only dislocations as the extended defects were observed in both the NCZ and CZ silicon. It is preliminarily believed that the difference between the formation of extended defects in the NCZ and CZ silicon wafers is ascribed to the effect of nitrogen on oxygen precipitation.
Grown-in Defects in Heavily Phosphorus-Doped Czochralski Silicon

Yuheng Zeng,Xiangyang Ma,Jiahe Chen,Weijie Song,Weiyan Wang,Longfei Gong,Daxi Tian,Deren Yang

DOI: https://doi.org/10.1016/j.physb.2009.08.139

2009-01-01

Abstract:Grown-in defects in an apparently dislocation-free heavily phosphorus (P)-doped Czochralski silicon (CZ-Si) crystal ingot were investigated by preferential etching and transmission electron microscopy (TEM). It was found that large-sized grown-in oxygen precipitates and the extended defects were present in the tang-end of the ingot. It is believed that oxygen precipitation in the tang-end ingot is enhanced by carbon (C) and by vacancies. Moreover, it was considered that phosphorus atoms might preferentially segregate on oxygen precipitates and caused high strain in silicon crystal. It is suggested that the large-sized precipitate might punch out dislocation loops under exceed stress during crystal growth. Finally, a tentative explanation for generation of grown-in defects in heavily P-doped CZ-Si is presented.
Study of nitrogen-related defects by means of gold and hydrogen diffusion investigations

A. L. Parakhonsky,E. B. Yakimov,D. Yang

DOI: https://doi.org/10.1016/S0167-9317(02)00912-7

IF: 2.3

2003-01-01

Microelectronic Engineering

Abstract:Gold and hydrogen diffusion in Czochralski grown Si with and without nitrogen, has been studied. It was found that the Au concentration after diffusion at 700, 750 and 800 °C in nitrogen-doped Si is always less than that in Si without nitrogen. A decrease of Au concentration in nitrogen-doped crystals is explained under the assumption that nitrogen stimulates oxygen precipitation. It is shown that the hydrogen penetration depth under wet chemical etching into nitrogen-doped samples is larger than that into Si without nitrogen that is explained by the nitrogen effect on the formation of oxygen-related traps for hydrogen.
Mechanism behind the Crack Formation in Hydrogen Doping Cz-Si Crystal Growth

Wataru Sugimura,Kousuke Takata,Masaki Tanaka,Kenji Higashida

DOI: https://doi.org/10.2320/matertrans.m2019046

2019-09-01

MATERIALS TRANSACTIONS

Abstract:In this study, {100} cracks were found in Czochralski (Cz) silicon wafers grown in the atmosphere including hydrogen under the condition of a low Vc/Gc (Vc, growth rate; and Gc, temperature gradient) although the {100} plane is not a cleavage plane of silicon crystals. It was also found that dislocation clusters were associated with the as-grown defects. To reveal the mechanism behind the crack formation, the process of introducing interstitial and hydrogen atoms into a Cz-Si crystal upon solidification was imitated by applying ion irradiation into Cz silicon wafers under three different conditions: silicon ions and hydrogen ions, silicon ions only, and hydrogen ions only. In this case, {100} cracks were only found in the wafer irradiated with both silicon and hydrogen ions. This suggests that the existence of dislocations in silicon is necessary for crack formation. Density functional theory calculations showed that the cleavage energy was decreased by the arrangement of hydrogen atoms on a {100} plane of a silicon crystal, which can explain the formation of {100} cracks during solidification.

materials science, multidisciplinary,metallurgy & metallurgical engineering
Secondary Defects of As-Grown Oxygen Precipitates in Nitrogen Doped Czochralski Single Crystal Silicon

Huan Tuo,Yun Liu,Minghao Li,Rongwang Dai,Hao Wang,Yuehui Yu,Zhongying Xue,Xing Wei

DOI: https://doi.org/10.1016/j.mssp.2023.107583

IF: 4.1

2023-01-01

Materials Science in Semiconductor Processing

Abstract:In this work, as-grown defects and their secondary defects in 300 mm nitrogen-doped Czochralski-grown singlecrystal silicon (NCZ-Si) are investigated. Secondary defects are revealed by homogeneous epitaxial layer growth, and as-grown defects are decorated via gaseous hydrogen chloride (HCl) etching. Localized light scattering (LLS) technique is utilized to inspect defect distribution and provide the latex sphere equivalent (LSE) size to differentiate defect types. With the locations of LLS, the morphology of defect is observed by scanning electron microscopy (SEM). According to the results, it indicated that secondary defects are extrinsic dislocation loops and stacking fault (SF) loops, which are induced by as-grown oxygen precipitates during the growth and cooling process. Furthermore, the correlation between the counts of secondary defects and nitrogen concentration is obtained. It contributes to the optimization of nitrogen doping to avoid the generation of detrimental defects for device operation.
Defects in Ge-doped Cz-Si Annealed under High Stress

A. Misiuk,Deren Yang,B. Surma,C. A. Londos,J. Bak-Misiuk,A. Andrianakis

DOI: https://doi.org/10.1016/j.mssp.2006.01.031

IF: 4.1

2006-01-01

Materials Science in Semiconductor Processing

Abstract:The effect of stress induced by enhanced hydrostatic pressure (HP, up to 1.1GPa) at annealing up to 1400K of Ge-doped Czochralski silicon (Cz-Si:Ge) on a creation of thermal donors (TDs) and of oxygen-related defects is investigated by spectroscopic (FTIR) photoluminescence and electrical methods. While the presence of Ge results in reduced generation of TDs in Cz-Si:Ge annealed at 723K under 105Pa, HP applied at 698–748K produces TDs in a much enhanced concentration. The treatments under 1.1GPa at 1070–1270K result in increasing, for up to 20%, precipitation of oxygen. An explanation of the HP effect on a creation of defects in Cz-Si:Ge is proposed.
Grown-In Defects in Nitrogen-Doped Czochralski Silicon

DR Yang,JG Lu,YJ Shen,DX Tian,XY Ma,LB Li,DL Que

DOI: https://doi.org/10.1063/1.1481190

2001-01-01

Abstract:Grown-in defects including oxygen precipitates and voids in nitrogen-doped Czochralski (NCZ) silicon have been investigated. It was found that the formation of grown-in oxygen precipitates in NCZ silicon can be divided into two stages. The large precipitates supposed to be enhanced by N2–V2–Ox complexes are generated around 1150 °C, while the small precipitates supposed to be enhanced by NmOn complexes are formed at 750 °C and below. Moreover, it was revealed that the oxygen precipitation behavior in the mixed-type NCZ silicon, which contains vacancy-type and interstitial-type defects distinguished by an OSF-ring in the oxidized wafer, is in sharp contrast to that in the mixed-type Czochralski (CZ) silicon, when subjected to one-step high temperature annealing (1050 °C/32 h) and two-step annealing (800 °C/4 h+1050 °C/16 h). On the other hand, it was found that, compared with CZ silicon, NCZ silicon has much denser crystal originated particles in smaller sizes, which were verified to have been annihilated at relatively lower temperatures. Based on the experimentally found phenomena, a tentative model that takes into account the formation of nitrogen-related complexes involving oxygen atoms and vacancies, void formation, and oxygen precipitation is presented.
Positron-Annihilation Investigation of Defects in Hydrogen-Containing Fz Si Irradiated with High-Dose Reactor Neutrons

XT MENG

DOI: https://doi.org/10.1016/0168-583x(94)00311-4

1995-01-01

Abstract:The positron lifetime spectroscopy indicates that the V- and V2-type defects coexist in hydrogen containing FZ Si irradiated with high-dose reactor neutrons. Their positron annihilation behavior has been ascribed to the formation and annealing out of some specific vacancy-type defects. Hydrogen influences strongly the annealing of the V-type defects below 200°C. Some bigger vacancy-clusters appear at 550°C. At 600–650°C the V-type defects reappear due to break of SiH bonds. At 750–800°C a lot of dislocations and/or V-type defects are produced. The positron annihilation behavior of vacancy-type defects agrees with that of the S-parameters.

A New Triclinic Defect in Neutron-Irradiated Fz-Silicon Grown in Hydrogen

An EPR study on a new triclinic symmetry defect in neutron-irradiated FZ-silicon

An Electron-Paramagnetic-Res Study On A New C2 Symmetry Defect In Neutron-Irradiated Silicon

An EPR study of a new C2 symmetry defect in neutron-irradiated silicon

Advanced Numerical Characterization of Mono-Crystalline Copper with Defects

An Epr Study on Proton-Implanted Defect in Fz-Silicon

DEEP LEVEL DEFECTS RELATED TO HYDROGEN IN NEUTRON IRRADIATED SILICON CONTAINING HYDROGEN

Defects in nitrogen-doped multicrystalline silicon

Role of Nitrogen Related Complexes in the Formation of Defects in Silicon

Defect structure of nitrogen doped czochralski silicon annealed under enhanced pressure

Oxygen Precipitation in Nitrogen Doped Czochralski Silicon Wafers. I. Formation Mechanisms of Near-Surface and Bulk Defects

Three Kinds of Hydrogen-Related Electron Irradiated Defects in Silicon Grown in Hydrogen

Electron Irradiation Induced Defects In Germanium-Doped Czochralski Silicon Substrates And Diodes

Extended Defects in Nitrogen-Doped Czochralski Silicon During Diode Process

Grown-in Defects in Heavily Phosphorus-Doped Czochralski Silicon

Study of nitrogen-related defects by means of gold and hydrogen diffusion investigations

Mechanism behind the Crack Formation in Hydrogen Doping Cz-Si Crystal Growth

Secondary Defects of As-Grown Oxygen Precipitates in Nitrogen Doped Czochralski Single Crystal Silicon

Defects in Ge-doped Cz-Si Annealed under High Stress

Grown-In Defects in Nitrogen-Doped Czochralski Silicon

Positron-Annihilation Investigation of Defects in Hydrogen-Containing Fz Si Irradiated with High-Dose Reactor Neutrons