Abstract:Radiation damage produced in 4H-SiC by electrons of different doses is presented by using multiple characterization techniques. Raman spectra results indicate that SiC crystal structures are essentially impervious to 10 Me V electron irradiation with doses up to 3000 kGy. However, irradiation indeed leads to the generation of various defects, which are evaluated through photoluminescence（PL） and deep level transient spectroscopy（DLTS）. The PL spectra feature a prominent broad band centered at 500 nm, accompanied by several smaller peaks ranging from 660 to 808 nm. The intensity of each PL peak demonstrates a linear correlation with the irradiation dose, indicating a proportional increase in defect concentration during irradiation. The DLTS spectra reveal several thermally unstable and stable defects that exhibit similarities at low irradiation doses.Notably, after irradiating at the higher dose of 1000 kGy, a new stable defect labeled as R 2 （Ec-0.51 eV） appeared after annealing at 800 K. Furthermore, the impact of irradiation-induced defects on SiC junction barrier Schottky diodes is discussed. It is observed that high-dose electron irradiation converts SiC n-epilayers to semi-insulating layers. However, subjecting the samples to a temperature of only 800 K results in a significant reduction in resistance due to the annealing out of unstable defects.

An EPR study of a new C2 symmetry defect in neutron-irradiated silicon

An Electron-Paramagnetic-Res Study On A New C2 Symmetry Defect In Neutron-Irradiated Silicon

An EPR study on a new triclinic symmetry defect in neutron-irradiated FZ-silicon

An Epr Study on Proton-Implanted Defect in Fz-Silicon

A New Triclinic Defect in Neutron-Irradiated Fz-Silicon Grown in Hydrogen

Electron Paramagnetic Resonance Observation of Trigonally Symmetric Si Dangling Bonds in Porous Silicon Layers: Evidence for Crystalline Si Phase

Grown-in Defects in Heavily Phosphorus-Doped Czochralski Silicon

Defect structure of nitrogen doped czochralski silicon annealed under enhanced pressure

Role of Nitrogen Related Complexes in the Formation of Defects in Silicon

Defects in nitrogen-doped multicrystalline silicon

Comparative chemistry of diffuse clouds III: sulfur-bearing molecules

Stress Dependent Structure of Annealed Nitrogen-Doped Cz-Si

Projective Quasiparticle Interference of a Single Scatterer to Analyze the Electronic Band Structure of ZrSiS

Defects Evolution in N-Type 4H-Sic Induced by Electron Irradiation and Annealing

EPR Study of Porous Silicon

Identification of silicon vacancy-related electron paramagnetic resonance centers in 4H SiC

On the experimental properties of the TS defect in 4H-SiC

Oxygen Precipitation in Nitrogen Doped Czochralski Silicon Wafers. I. Formation Mechanisms of Near-Surface and Bulk Defects

Void-like Defects in Annealed Czochralski Silicon

Revealing the Defects Introduced in N- or Ge-doped Cz-Si by Γirradiation and High Temperature-High Pressure Treatment

Native point defects and carbon clusters in 4H-SiC: A hybrid functional study