Abstract:Porous-Si samples were optically studied by using the photoluminescence, Raman scattering, the absolute reflectance and ellipsometry methods. Results show that the porous Si has low optical constants, and can trap more than 95% of the visible photons, but give no evidence of a strong interband transition existing in the visible region, especially at the 1.8-eV PL peak position, as suggested by the quantum size effect. The Lorentz oscillator and Bruggeman effective medium approximation (EMA) models were used in data analyses. Calculations indicate that if strong interband transition occurs, an optical structure can be recognized in the spectra, but it was not seen in the experiments. Therefore, a contradiction exists in the PL and optical absorption experiments. Except for other mechanisms, the calculations show that the layer dispersion effect may result in a shift of the luminescence peak for the porous Si. The 1.8-eV PL peak, not always shifted significantly but often seen with consistency in other material structures, strongly indicates the same origin of visible luminescence as those suggested in the literature. A possible mechanism for the luminescence and Raman enhancement as well as the photon trap phenomenon was discussed, and was attributed mainly to random multiple micro-reflections occurring in the porous-Si layer that has extremely large internal micro surfaces.

Electron Paramagnetic Resonance Observation of Trigonally Symmetric Si Dangling Bonds in Porous Silicon Layers: Evidence for Crystalline Si Phase

EPR Study of Porous Silicon

Structures and absorption optical spectra of silicon cluster Si 9 via first-principles calculations

Optical anisotropy and strain-induced birefringence in dislocation-free silicon single crystals

Photoluminescence, Composition and Microstructure of Porous Silicon Prepared by Different Substrates

Optical Study of Photon-Trapped Porous Silicon Layer

An EPR study of a new C2 symmetry defect in neutron-irradiated silicon

An EPR study on a new triclinic symmetry defect in neutron-irradiated FZ-silicon

An Epr Study on Proton-Implanted Defect in Fz-Silicon

Raman Scattering Of Porous Structure Formed On C+-Implanted Silicon

An Electron-Paramagnetic-Res Study On A New C2 Symmetry Defect In Neutron-Irradiated Silicon

On the Origin of the 417 and 437 Nm Double-Peak Emission in Porous Si with Crystallite Sizes Smaller Than 3.0 Nm

Boundary and Symmetry Determined Exciton Distribution in Two Dimensional Silicon Nanosheets

OBSERVATION OF FOLDED ACOUSTIC PHONONS IN A POROUS SILICON SUPERLATTICE

Evidence for 2-D pi-bonded Surface Reconstructions on Si(111)

High harmonic studies of structural phase transitions in silicon

Time-resolved X-ray Reflection Phases of the Nearly Forbidden Si(222) Reflection under Laser Excitation.

The Observation of the Low-Frequency Acoustic Phonon Torsional Modes in Nanocrystalline Silicon

Investigation of Electron-Phonon Coupling in Epitaxial Silicene by In-situ Raman Spectroscopy

π-Conjugation in Epitaxial Si(111)-($\sqrt3$$\times$$\sqrt3$) Surface: an Unconventional "Bamboo Hat" Bonding Geometry for Si

Study of Photon-Trapping Phenomenon in Porous Silicon Layer