Abstract:Hydrogen, introduced into crystalline (c-) or amorphous (a-) silicon (Si), plays an important role in improving Si properties for photovoltaics application. Low temperature proton implantation in c-Si and a-Si or H-doping of Si films introduces metastable hydrogen in the bond-centered-position (BCH), which dissociates with increasing temperatures into new metastable complexes. Using ab-initio molecular dynamics we report on the stability of BCH, a convenient hydrogen model system, in crystalline Si and its temperature-induced dissociation products in a wide temperature range, which includes temperatures close to solar cell operating conditions. Particular attention was paid to the newly experimentally discovered H2** dimer, and the H2* dimer, as well as isolated interstitial hydrogen and monohydrides. Each complex leaves a characteristic signature in the frequency spectrum, the density of states (DOS) and in the imaginary part of the dielectric constant that agrees well with experiments. All complexes modify the vicinity of the energy gap of pure c-Si. BCH introduces characteristic donor levels, causing a strong peak in the DOS just below the intrinsic conduction band. The Fermi energy is raised, filling these donor states with two electrons and causing a strong peak in the imaginary part of the dielectric constant in the infrared. The H2** and H2* dimers introduce a low energy tail in the imaginary part of the dielectric constant. The results are important for experimental in-situ optical characterization of Si film growth that often involves hydrogen.

Positron-annihilation study of the structure of pure and hydrogenated amorphous silicon

Defects and Microvoids in A-Si and A-Si:H

A study of plasma-deposited amorphous SiOx:H (0⩽x⩽2.0) films using infrared spectroscopy

Defects in Tio2 Films on P(+)-Si Studied by Positron Annihilation Spectroscopy

Studies of defect states in the interface between SiO2 and a-Si:H films

Positron annihilation spectroscopy of the interface between nanocrystalline Si and SiO2

Positron-Annihilation Investigation of Defects in Hydrogen-Containing Fz Si Irradiated with High-Dose Reactor Neutrons

Depth Profile Study on Raman Spectra of High-Energy-electron-irradiated Hydrogenated Amorphous Silicon Films

Nmr-Studies of Hydrogen Microstructures in Hydrogenated Amorphous-Silicon Films

Defect States in Hydrogenated Amorphous Silicon-Sulphur Alloys by ESR and PAS

Structure and Electronic States in A-Si:H Thin Films

Resonant Raman Scattering in Hydrogenated Amorphous Silicon Films

Measurement and Analysis of Composition and Depth Profile of H in Amorphous Si 1− X C X :H Films

Nanocrystalline Si Studied by Beam-Based Positron Annihilation Spectroscopy

Microstructure, vacancies and moments of nuclear magnetic resonance of hydrogenated amorphous silicon

Interactions of atomic hydrogen with amorphous SiO 2

Ab initio study of the structure and properties of amorphous silicon hydride from accelerated molecular dynamics simulations

Thermally stimulated H emission and diffusion in hydrogenated amorphous silicon

Dynamical, Vibrational, Electronic and Optical Properties in c-Si:H with Bond-Centered-Hydrogen, H Dimers and Other H Complexes

Structural properties of hydrogenated amorphous silicon carbide alloys

Structural Studies on Semiconducting Hydrogenated Amorphous Silicon Oxide Films