Abstract:Hydrogen, introduced into crystalline (c-) or amorphous (a-) silicon (Si), plays an important role in improving Si properties for photovoltaics application. Low temperature proton implantation in c-Si and a-Si or H-doping of Si films introduces metastable hydrogen in the bond-centered-position (BCH), which dissociates with increasing temperatures into new metastable complexes. Using ab-initio molecular dynamics we report on the stability of BCH, a convenient hydrogen model system, in crystalline Si and its temperature-induced dissociation products in a wide temperature range, which includes temperatures close to solar cell operating conditions. Particular attention was paid to the newly experimentally discovered H2** dimer, and the H2* dimer, as well as isolated interstitial hydrogen and monohydrides. Each complex leaves a characteristic signature in the frequency spectrum, the density of states (DOS) and in the imaginary part of the dielectric constant that agrees well with experiments. All complexes modify the vicinity of the energy gap of pure c-Si. BCH introduces characteristic donor levels, causing a strong peak in the DOS just below the intrinsic conduction band. The Fermi energy is raised, filling these donor states with two electrons and causing a strong peak in the imaginary part of the dielectric constant in the infrared. The H2** and H2* dimers introduce a low energy tail in the imaginary part of the dielectric constant. The results are important for experimental in-situ optical characterization of Si film growth that often involves hydrogen.

Time evolution of the density of states of tritiated hydrogenated amorphous silicon

Thermally stimulated H emission and diffusion in hydrogenated amorphous silicon

Thermal Transport Mechanism of Amorphous HfO 2 : A Molecular Dynamics Based Study

Two-level systems and growth-induced metastability in hydrogenated amorphous silicon

Ab initio estimate of temperature dependence of electrical conductivity in a model amorphous material: hydrogenated amorphous silicon

Electrical Conduction of Silicon Oxide Containing Silicon Quantum Dots

Diffusion of hydrogen in crystalline silicon

Doping dependence of boron–hydrogen dynamics in crystalline silicon

Further Experimental Evidence against the Utility of Occam's Razor

Doping Effects in Co-deposited Mixed Phase Films of Hydrogenated Amorphous Silicon Containing Nanocrystalline Inclusions

Dynamical, Vibrational, Electronic and Optical Properties in c-Si:H with Bond-Centered-Hydrogen, H Dimers and Other H Complexes

Microstructure, vacancies and moments of nuclear magnetic resonance of hydrogenated amorphous silicon

Decoupling between propagating acoustic waves and two-level systems in hydrogenated amorphous silicon

Diffusion of Hydrogen in Proton Implanted Silicon: Dependence on the Hydrogen Concentration

Dependence of hydrogen evolution from a-Si: H on boron doping and substrate potential

Defects and Microvoids in A-Si and A-Si:H

Diffusion of Hydrogen Isotopes in 3C-Sic in HTR-PM: A First-Principles Study

Conduction Mechanism of Amorphous Hydrogenated Silicon Nitride Films

Excess Modes and Enhanced Scattering in Rare-Earth Doped Amorphous Silicon Thin Films

Depth Profile Study on Raman Spectra of High-Energy-electron-irradiated Hydrogenated Amorphous Silicon Films

Positron-annihilation study of the structure of pure and hydrogenated amorphous silicon