Abstract:Hydrogen, introduced into crystalline (c-) or amorphous (a-) silicon (Si), plays an important role in improving Si properties for photovoltaics application. Low temperature proton implantation in c-Si and a-Si or H-doping of Si films introduces metastable hydrogen in the bond-centered-position (BCH), which dissociates with increasing temperatures into new metastable complexes. Using ab-initio molecular dynamics we report on the stability of BCH, a convenient hydrogen model system, in crystalline Si and its temperature-induced dissociation products in a wide temperature range, which includes temperatures close to solar cell operating conditions. Particular attention was paid to the newly experimentally discovered H2** dimer, and the H2* dimer, as well as isolated interstitial hydrogen and monohydrides. Each complex leaves a characteristic signature in the frequency spectrum, the density of states (DOS) and in the imaginary part of the dielectric constant that agrees well with experiments. All complexes modify the vicinity of the energy gap of pure c-Si. BCH introduces characteristic donor levels, causing a strong peak in the DOS just below the intrinsic conduction band. The Fermi energy is raised, filling these donor states with two electrons and causing a strong peak in the imaginary part of the dielectric constant in the infrared. The H2** and H2* dimers introduce a low energy tail in the imaginary part of the dielectric constant. The results are important for experimental in-situ optical characterization of Si film growth that often involves hydrogen.

Dependence of hydrogen evolution from a-Si: H on boron doping and substrate potential

Thickness Dependence of Properties of Plasma-Deposited Amorphous SiO2 Films

Room Temperature Growth of Hydrogenated Amorphous Silicon Films by Dielectric Barrier Discharge Enhanced Cvd

Investigation of Microstructure and Photoelectric Properties of Boron- Doped Amorphous Silicon Films

Influence of Boron-doping on Electrical Properties of Na-Si:H Thin Film Prepared by PECVD

The role of hydrogen in amorphous silicon films deposited by the pyrolytic decomposition of silane

Structure and Electronic States in A-Si:H Thin Films

Influence of Substrate Temperature on the Microstructure and Optical Properties of Hydrogenated Silicon Thin Film Prepared with Pure Silane

Effect of Hydrogen Radical Exposure on the Interfacial and Bulk Structure of A-Si:H/a-sinx:h Multilayer Films

Temperature dependence of the surface roughness evolution during hydrogenated amorphous silicon film growth

Surface reaction probability during fast deposition of hydrogenated amorphous silicon with a remote silane plasma

Doping dependence of boron–hydrogen dynamics in crystalline silicon

The Effect of Relatively Low Hydrogen Dilution on the Properties of Carbon-Rich Hydrogenated Amorphous Silicon Carbide Films

Cold Deposition of Large-Area Amorphous Hydrogenated Silicon Films by Dielectric Barrier Discharge Chemical Vapor Deposition

Doping Effects in Co-deposited Mixed Phase Films of Hydrogenated Amorphous Silicon Containing Nanocrystalline Inclusions

Properties of A-Si∶h Prepared by DBDCVD

Hydrogen Bonding in Hydrogenated Amorphous Silicon Thin Films Prepared at Different Precursor Gas Temperatures with Undiluted Silane

Dynamical, Vibrational, Electronic and Optical Properties in c-Si:H with Bond-Centered-Hydrogen, H Dimers and Other H Complexes

Behavior of hydrogen during laser crystallization and RTA of a-Si: H SOI

Diffusion of hydrogen atoms in silicon layers deposited from molecular beams on dielectric substrates

Roles Of Hydrogen Dilution On The Microstructural And Optoelectronic Properties Of B-Doped Nanocrystalline Si : H Thin Films