Abstract:Growth mechanism and ion energy dependence of composition of ultrasmooth a-C:H:Si films grown from ionization of tetramethylsilane (TMS) and toluene mixture at a fixed gas ratio have been investigated by varying the applied bias voltage. The dynamic scaling theory is employed to evaluate the roughness evolution of a-C:H:Si films, and to extract roughness and growth exponents of α ∼ 0.51 and β ∼ 0, respectively. The atomically smooth surface of a-C:H:Si films with Ra ∼ 0.1 nm is thermally activated by the energetic ion-impact induced subsurface “polishing” process for ion dominated deposition. The ion energy (bias voltage) plays a paramount role in determining the hydrogen incorporation, bonding structure and final stoichiometry of a-C:H:Si films. The hydrogen content in the films measured by ERDA gradually decreases from 36.7 to 17.3 at. % with increasing the bias voltage from 0.25 to 3.5 kV, while the carbon content in the films increases correspondingly from 52.5 to 70.1 at. %. The Si content is kept almost constant at ∼9–10 at. %. Depending on the ion-surface interactions, the bonding structure of a-C:H:Si films grown in different ion energy regions evolves from chain-developed polymer-like to cross-linked diamond-like to sp2-bonded a–C as revealed by XPS, Raman, and FTIR analysis. Such a structural evolution is reflected in their measured nanomechanical properties such as hardness, modulus, and compressive stress. An enhanced viscoplastic behavior (i.e., viscoplastic exponent of ∼0.06) is observed for polymeric a-C:H:Si films. A hydrogen content threshold (H > 20 at. %) exists for the as-grown a-C:H:Si films to exhibit superlow friction in dry N2 atmosphere. An extremely low friction coefficient of ∼0.001 can be obtained for polymer-like a-C:H:Si film. These near-frictionless a-C:H:Si films are strongly promising for applications in industrial lubricating systems.

Temperature dependence of the surface roughness evolution during hydrogenated amorphous silicon film growth

Thickness Dependence of Properties of Plasma-Deposited Amorphous SiO2 Films

Properties of plasma-deposited amorphous SiO2 films

Evolution of structure, morphology, and reactivity of hydrogenated amorphous silicon film surfaces grown by molecular-dynamics simulation

Surface reaction probability during fast deposition of hydrogenated amorphous silicon with a remote silane plasma

Kinetic Monte Carlo Study on the Evolution of Silicon Surface Roughness under Hydrogen Thermal Treatment

Dependence of hydrogen evolution from a-Si: H on boron doping and substrate potential

Room Temperature Growth of Hydrogenated Amorphous Silicon Films by Dielectric Barrier Discharge Enhanced Cvd

Growth Mechanism and Composition of Ultrasmooth A-C:H:Si Films Grown from Energetic Ions for Superlubricity

The role of hydrogen in amorphous silicon films deposited by the pyrolytic decomposition of silane

Composition Dependence Of Surface Morphology Of Ultrathin A-Sige : H Alloys Studying By Atomic Force Microscopy

Kinetics and mechanism of amorphous hydrogenated silicon growth by homogeneous chemical vapor deposition

Effect of Hydrogen Radical Exposure on the Interfacial and Bulk Structure of A-Si:H/a-sinx:h Multilayer Films

Two-level systems and growth-induced metastability in hydrogenated amorphous silicon

Anisotropic Behaviour of Surface Roughening in Lattice Mismatched Heteroepitaxial Thin Films

Substrate-thickness dependence of hydrogenated microcrystalline silicon nucleation rate on amorphous silicon layer

Thermally stimulated H emission and diffusion in hydrogenated amorphous silicon

Stress-driven Surface Evolution in Heteroepitaxial Thin Films: Anisotropy of the Two-Dimensional Roughening Mode

How hydrogen influences axial growth rate distribution during silicon deposition from silane

Molecular Dynamics Simulation for Intrinsic Stress Caused by Surface Oxidation on Hydrogenated Amorphous Silicon

Studies of Morphological Instability and Dislocation Formation in Heteroepitaxial Si1−xGex Thin Films Via Controlled Annealing Experiments