Abstract:Chemical vapour deposition of silicon from silane is commonly accepted to proceed by a Langmuir-Hinshelwood adsorption mechanism followed by a chemical decomposition reaction. The silicon growth rate, as known, is decreased by the addition of hydrogen to the reaction gas. Axial distribution of silicon growth rate in a hot-wall reactor tube is discussed in the case of successive increases in hydrogen input partial pressure, and it is shown that a satisfying mathematical solution of the problem may be obtained when a Freundlich isotherm in its square-rooted form is chosen for silane adsorption instead of the Langmuir isotherm.

How hydrogen influences axial growth rate distribution during silicon deposition from silane