Abstract:We present results for ground state structures of small Si$_{n}$H (2 \leq \emph{n} \leq 10) clusters using the Car-Parrinello molecular dynamics. In particular, we focus on how the addition of a hydrogen atom affects the ground state geometry, total energy and the first excited electronic level gap of an Si$_{n}$ cluster. We discuss the nature of bonding of hydrogen in these clusters. We find that hydrogen bonds with two silicon atoms only in Si$_{2}$H, Si$_{3}$H and Si$_{5}$H clusters, while in other clusters (i.e. Si$_{4}$H, Si$_{6}$H, Si$_{7}$H, Si$_{8}$H, Si$_{9}$H and Si$_{10}$H) hydrogen is bonded to only one silicon atom. Also in the case of a compact and closed silicon cluster hydrogen bonds to the cluster from outside. We find that the first excited electronic level gap of Si$_{n}$ and Si$_{n}$H fluctuates as a function of size and this may provide a first principles basis for the short-range potential fluctuations in hydrogenated amorphous silicon. Our results show that the addition of a single hydrogen can cause large changes in the electronic structure of a silicon cluster, though the geometry is not much affected. Our calculation of the lowest energy fragmentation products of Si$_{n}$H clusters shows that hydrogen is easily removed from Si$_{n}$H clusters.

What problem does this paper attempt to address?

The problem that this paper attempts to solve is to explore the influence of hydrogen atoms on the ground - state structure, geometry, total energy, and the first excited - electron - level gap of small - sized silicon clusters (Si_nH, where $2\leq n\leq10$). Specifically, the research focuses on the following aspects: 1. **Influence of hydrogen atoms on the geometric structure of silicon clusters**: Study how the addition of hydrogen atoms changes the ground - state geometric configuration of silicon clusters. 2. **Influence of hydrogen atoms on the stability of silicon clusters**: Analyze whether hydrogen atoms enhance the stability of silicon clusters. 3. **Bonding characteristics of hydrogen atoms in silicon clusters**: Explore the bonding modes and positions of hydrogen atoms in silicon clusters of different sizes. 4. **Change in the first excited - electron - level gap**: Study how the introduction of hydrogen atoms affects the first excited - electron - level gap of silicon clusters and explore its influence on the electronic structure. 5. **Low - energy fragmentation products**: Calculate and analyze the lowest - energy fragmentation products of hydrogenated silicon clusters to understand the ease of hydrogen - atom removal. Through these studies, the author hopes to provide a theoretical basis for understanding phenomena such as short - range potential fluctuations in the hydrogenated amorphous silicon (a - Si:H) system. The research shows that the addition of hydrogen atoms can significantly change the electronic structure of silicon clusters, although their geometric structure does not change much. In addition, hydrogen atoms tend to bind to silicon clusters from the outside and are easily removed from hydrogenated silicon clusters. In summary, this paper aims to reveal the specific influence of hydrogen atoms on the structure and electronic properties of small - sized silicon clusters through detailed theoretical calculations, providing a basis for further understanding the physicochemical phenomena in complex silicon - material systems.

Effect of hydrogen on ground state structures of small silicon clusters

Charge-induced effects on the structure and properties of silane and disilane derivatives

Dynamical, Vibrational, Electronic and Optical Properties in c-Si:H with Bond-Centered-Hydrogen, H Dimers and Other H Complexes

Photo-absorption spectra of small hydrogenated silicon clusters using the time-dependent density functional theory

Distribution and electronic structure of interstitial hydrogen atoms in β-SiC: a First-Principles study

Effects of Hydrogen Atoms on the Electronic Structure and Transport Properties of Silicon Monatomic Chains

Microstructure, vacancies and moments of nuclear magnetic resonance of hydrogenated amorphous silicon

Design of Cluster Structure Units with Large Surface Areas for High-Capacity Hydrogen Storage: in the Case of Si12C12H24

Hydrogen inserted into the Si(100)-2x1-H surface: A first-principles study

Assessing the Effect of Hydrogen on the Electronic Properties of 4H-Sic

Defect State Density and Orbital Localization in a-Si:H/c-Si Heterojunction and the Role of H

Ab initio study of the structure and properties of amorphous silicon hydride from accelerated molecular dynamics simulations

Electronic-Structure of Hydrogen-Vacancy Complexes in Crystalline Silicon - A Theoretical-Study

The Structure and Stability of Si@Al12Hn (n=1−14) Clusters

Effect of Hydrogen Radical Exposure on the Interfacial and Bulk Structure of A-Si:H/a-sinx:h Multilayer Films

Experimentally Constrained Molecular Relaxation: The case of hydrogenated amorphous silicon

First-principles Studies on the Adsorptive Properties of Hydrogenated Si Cluster

The Effect of Hydrogen Species on the Electronic Properties of Nc-Si:H Prepared in A Triode Pecvd System

Hydrogen segregation and its roles in structural stability and metallization: silane under pressure

From structure to surface tension of small silicon clusters by Quantum Monte Carlo simulations

The role of hydrogen in amorphous silicon films deposited by the pyrolytic decomposition of silane