Abstract:The atomic structure and electronic states of the hydrogenated 3C–SiC(001)-(2×1) surface are investigated by the first-principles calculations. Two models of the hydrogenated surfaces are studied, i.e., the hydrogenated alternating up and down dimer (AUDD) surface and the missing row asymmetric dimer (MRAD) surface, respectively. It is found that the length of the dimers on monohydrided AUDD surface is significantly reduced after hydrogenation, in sharp contrast to the case of Si(001)-(2×1) surface on which the dimers become longer after hydrogenation. The strengthening of the dimers on monohydrided AUDD surface can explain the strong S-state observed in experiments. In the calculated partial density of states (PDOS) of the adsorbed hydrogen atoms on monohydrided AUDD surface, there is only one sharp peak at the energy of about 2.6 eV below the valence band maximum (VBM), in good agreement with the recent photoemission experiments. This binding energy is considerably lower than that of the hydrogen-induced states on Si(001) surface. The reduction of the dimer length, the strong S-state, and the low binding energy of the hydrogen-induced states on the monohydrided AUDD surface can be uniformly explained by the smaller lattice constant of SiC and the stronger Coulomb interaction between the adsorbed H atoms. In the PDOS of the hydrogen atoms on dihydrided MRAD surface, there are several large peaks with the main surface resonance peak located at about 4 eV below the VBM. The calculation shows that the position of the calculated hydrogen-induced states of monohydrided AUDD surface agrees with the photoemission experiments.

First-principles Studies on the Adsorptive Properties of Hydrogenated Si Cluster

Adsorption of O Adatoms on Hydrogenated Si Cluster

A Theoretical Study of Si4h2 Cluster with Ab Initio and Density Functional Theory Methods

Theoretical study of hydrogenated 3C–SiC(001)-(2×1) surface

The Structure and Stability of Si@Al12Hn (n=1−14) Clusters

Initial Processes of Hydrogen Adsorption on Si(100) Surface

First-Principles Study on the Surface Chemistry of 1.4 Nm Silicon Nanocrystals: Case of Hydrosilylation

Quantum confinement and surface chemistry of 0.8–1.6 nm hydrosilylated silicon nanocrystals

First-Principles Study of Metal Atoms Adsorbed on Sio2 Surface

High capacity H2 adsorption over Si4Lin (n=1-3) binary clusters: A DFT study

A First-Principles Investigation into the Adsorption Behavior and Deposition Mechanism of Boron-Containing Gases on Si(100) Surfaces During Chemical Vapor Deposition

Theoretical Investigation of the Ammonia Adsorption Process on Si(100)-2×1 Surface

Initial Surface Reactions in Atomic Layer Deposition of Hfsixoy and Hfo2: A Comparative Study by Density Functional Theory

Oxygen adsorption on small Si clusters: A full-potential linear-muffin-tin-orbital molecular-dynamics study

Hydrogen inserted into the Si(100)-2x1-H surface: A first-principles study

Initial Processes of Hydrogen Chemisorption on Si(111) Surface

Design of Cluster Structure Units with Large Surface Areas for High-Capacity Hydrogen Storage: in the Case of Si12C12H24

Computational Insights into the Energetics of Single C2-C10 Aliphatic Moieties Adsorbed on Hydrogenated Silicon (111) Surface

Photo-absorption spectra of small hydrogenated silicon clusters using the time-dependent density functional theory

Effect of hydrogen on ground state structures of small silicon clusters

Kinetics of Molecular Hydrogen Dissociative Adsorption on Si(111) Studied by Sum-Frequency Vibrational Spectroscopy and Second Harmonic Generation