Abstract:Silicon-based organic precursors are widely applied in the vapor-fed flame synthesis of monocrystalline silicon, silicon dioxide, and silicon nitride. Due to the lack of kinetic investigations on reactions of silicon-based organic precursors, rate constants were usually analogized to those of their hydrocarbon counterparts. Investigations on the similarities and differences between the two types of compounds become necessary. This work reports a comparative theoretical investigation on H-abstraction reactions with H and CH3 attacking for silanes and their alkane counterparts, including silane and methane, disilane, methylsilane and ethane, dimethylsilane and propane, trimethylsilane and iso-butane, and tetramethylsilane and neo-pentane at the domain-based local pair natural orbital coupled cluster with perturbative triple excitations (DLPNO-CCSD(T))/cc-pVTZ//M06-2X/cc-pVTZ level. The rate constants were calculated using the conventional transition-state theory coupled with the asymmetric Eckart tunneling corrections over 600-2000 K. The calculated results show that dramatic discrepancies exist between H-abstraction from silicon sites in silanes and equivalent carbon sites in their alkane counterparts with H and CH3 attacking. The H-abstraction reactions from the primary carbon sites in silanes have generally lower barrier energies than the similar reactions in their alkane counterparts, while those in methylsilane and dimethylsilane with H attacking are the only two with higher barrier energies. Electrostatic potential mapped molecular van der Waals surfaces were adopted to provide insight into the calculated trends in barrier energies. The H-abstraction reactions from silicon sites in silanes have much higher rate constants than those from equivalent carbon sites in their alkane counterparts, especially under low-temperature conditions, while the rate constants of H-abstraction reactions from primary carbon sites in silanes and their alkane counterparts show relatively strong analogy.

Charge-induced effects on the structure and properties of silane and disilane derivatives

Effect of hydrogen on ground state structures of small silicon clusters

The Dissociated Amorphous Silica Surface: Model Development and Evaluation.

Entropic Effects on the Free Energies of Clusters in Silane Plasmas

Ab initio calculation of the interaction between neutral and charged silicon nanoclusters

The Effect of Relatively Low Hydrogen Dilution on the Properties of Carbon-Rich Hydrogenated Amorphous Silicon Carbide Films

Quantum confinement and surface chemistry of 0.8–1.6 nm hydrosilylated silicon nanocrystals

Hydrogen segregation and its roles in structural stability and metallization: silane under pressure

Evolution of structure, morphology, and reactivity of hydrogenated amorphous silicon film surfaces grown by molecular-dynamics simulation

Dynamical, Vibrational, Electronic and Optical Properties in c-Si:H with Bond-Centered-Hydrogen, H Dimers and Other H Complexes

Substituent Effect on the Dissociation Energy of the Si-H Bond: A Density Functional Study

Structure and Electronic States in A-Si:H Thin Films

Directed Gas Phase Formation of Silene (H2 SiCH2 )

On the Nature of the Bonding in Metal-Silane sigma-Complexes

Investigation of the microstructure and optical properties of hydrogenated polymorphous silicon films prepared with pure silane

Structural, optical, and electronic properties of hydrogenated polymorphous silicon films deposited from silane–hydrogen and silane–helium mixtures

Theoretical Investigation on H-Abstraction Reactions of Silanes with H and CH3 Attacking: A Comparative Study with Alkane Counterparts

Insights into the Nature of SiH4−BH3Complex: Theoretical Investigation of New Mechanistic Pathways Involving SiH3•and BH4•Radicals

Optical Study of Silicon-Containing Amorphous Hydrogenated Carbon

A Theoretical Study of Si4h2 Cluster with Ab Initio and Density Functional Theory Methods

Impact of H-Related Chemical Bonds on Physical Properties of SiNx:H Films Deposited via Plasma-Enhanced Chemical Vapor Deposition