Abstract:SiNx:H film deposition via plasma-enhanced chemical vapor deposition has been widely used in semiconductor devices. However, the relationship between the chemical bonds and the physical and chemical properties has rarely been studied for films deposited using tools in terms of the actual volume production. In this study, we investigated the effects of the deposition conditions on the H-related chemical bonding, physical and chemical properties, yield, and quality of SiNx:H films used as passivation layers at the 28 nm technology node. The radiofrequency (RF) power, electrode plate spacing, temperature, chamber pressure, and SiH4:NH3 gas flow ratio were selected as the deposition parameters. The results show a clear relationship between the H-related chemical bonds and the examined film properties. The difference in the refractive index (RI) and breakdown field (EB) of the SiNx:H films is mainly attributed to the change in the Si–H:N–H ratio. As the Si–H:N–H ratio increased, the RI and EB showed linear growth and exponential downward trends, respectively. In addition, compared with the Si–H:N–H ratio, the total Si–H and N–H contents had a greater impact on the wet etching rates of the SiNx:H films, but the stress was not entirely dependent on the total Si–H and N–H contents. Notably, excessive electrode plate spacing can lead to a significant undesired increase in the non-uniformity and surface roughness of SiNx:H films. This study provides industry-level processing guidance for the development of advanced silicon nitride film deposition technology.

Residual Stress in Amorphous and Nanocrystalline Si Films Prepared by PECVD with Hydrogen Dilution

Stress in Amorphous Siox:H Films Prepared by Plasma-Enhanced Chemical Vapor Deposition

Properties of plasma-deposited amorphous SiO2 films

Stress and Crystallization of Plasma Enhanced Chemical Vapour Deposition Nanocrystalline Silicon Films.

Thickness Dependence of Properties of Plasma-Deposited Amorphous SiO2 Films

Spectroscopic Analysis of Film Stress Mechanism in PECVD Silicon Nitride

The Effect of Relatively Low Hydrogen Dilution on the Properties of Carbon-Rich Hydrogenated Amorphous Silicon Carbide Films

Growth of Si-C-H film by RF plasma enhanced chemical vapor deposition

Raman Characterization of the Structural Evolution in Amorphous and Partially Nanocrystalline Hydrogenated Silicon Thin Films Prepared by PECVD

Preparation and Photoluminescence of Nanocrystalline Si-Rich Silicon Oxide Films by Pecvd

Methods of producing plasma enhanced chemical vapor deposition silicon nitride thin films with high compressive and tensile stress

Investigation of nanocrystallization of a-Si1 - XGe x:H thin films diluted with argon in the PECVD system

Study of residual stress in reactively sputtered epitaxial Si-doped GaN films

Stress Control and Anti-erosion Characteristics of PECVD SiC Thin Film

The Influence of Radio Frequency Power on the Characteristics of Carbon-Rich Hydrogenated Amorphous Silicon Carbide Films

Residual Stress in Sputtered Silicon Oxycarbide Thin Films

Gisaxs And Atr-Ftir Studies On Stress-Induced Microstructure Evolution Of A-Si:H Under H-2 Plasma Exposure

Modifying Residual Stress and Stress Gradient in LPCVD SI3N 4 Film with Ion Implantation

Measurement and Analysis of Composition and Depth Profile of H in Amorphous Si 1− X C X :H Films

Plasma Enhanced Chemical Vapor Deposition and Characterization of Hydrogenated Amorphous SiC Films on Si

Impact of H-Related Chemical Bonds on Physical Properties of SiNx:H Films Deposited via Plasma-Enhanced Chemical Vapor Deposition