Abstract:This study presents a method for modifying residual stress in low-pressure chemical vapor deposition (LPCVD) Si3N4 films. Utilizing ion implantation technology, the residual stress and stress gradient in the Si3N4 film has been successfully modified with a wide adjustable range. Compressive stress is introduced by the ion implantation and offsets the intrinsic tensile stress in the film. Besides the distribution of the induced stress can modify the stress gradient in the film. An analytical model has been developed to describe the modifications. The dosage and energy of ion implantation can be controlled accurately, and therefore the presented method can modify stress level precisely. With this method, the mean residual stress in the Si3N4 film was adjusted from 1.2GPa tensile to −0.1GPa compressive continuously. Moreover, cantilever curling caused by the stress gradient was reduced efficiently, which demonstrates the modification of the stress gradient. The ion implantation slightly increased the film's etch rate in HF and KOH, and degrade the mechanical properties, hardness and elastic modulus, due to damage caused by atomic collision. Thermal annealing was used to recover the damage.

Stress Control and Anti-erosion Characteristics of PECVD SiC Thin Film

Investigation of PECVD SiC nano film

Experimental Study of the Internal Stress of Silicon Nitride Films Deposited by PECVD

Stress Control of Silicon Nitride Films Deposited by Plasma Enhanced Chemical Vapor Deposition

Stress and Stress Gradient Control Technology of Multi-Layer Metal-SiC Thin Film

Research on Some Key Mechanical Properties of Silicon Nitride Thin Films Deposited by PECVD

Modifying Residual Stress and Stress Gradient in LPCVD SI3N 4 Film with Ion Implantation

Study on PECVD process and characteristics of SiCxNy:H film

Low Stress Silicon Nitride Thin Film Deposition by PECVD

Residual Stress in Sputtered Silicon Oxycarbide Thin Films

Effect of laser annealing on amorphous silicon carbide films prepared by PECVD

&Lt;title>study on the Stress of Silicon Nitride Thin Films Prepared by PECVD</title>

Stress Design of a Laminated MoSi2/Cr Coating under Particle Impact and High Temperature Environment

Influences of Electron Energy Stateon the Residual Stress of Silicon Nitride Thin Films Deposited by PECVD

Microstructure, mechanical and high-temperature tribological properties of amorphous SiC films by pulsed magnetron sputtering

Residual Stress Characterization of Polycrystalline 3C-Sic Films on Si(100) Deposited from Methylsilane

Residual Stress in Amorphous and Nanocrystalline Si Films Prepared by PECVD with Hydrogen Dilution

Study on a PECVD SiC-coated Pressure Sensor

Fabrication of Low Stress PECVD-SiNx Film in High Frequency Mode

Stress and Crystallization of Plasma Enhanced Chemical Vapour Deposition Nanocrystalline Silicon Films.

Silicon Dioxide Film Deposited by Plasma Enhanced Chemical Vapor Deposition at Low Temperature