Abstract:Reducing the self-heating of SiC- and GaN/SiC-based high-powered devices by integrating diamond films offers promising performance enhancement of these devices. However, such a reduction strategy faces serious problems, such as diamond nucleation on SiC and stress accumulation greater than 10 GPa. In this work, a SiN x dielectric layer (∼50 nm) was coated onto the C polar face of a 4H–SiC wafer using microwave plasma chemical vapor deposition (MPCVD) to improve direct dense diamond nucleation and growth, significantly reduce the stress, and build Si–C(SiC)⋯Si⋯C(diamond) bond bridges. This SiN x thin layer, prepared by activating Si ions under Ar/N plasma during magnetron sputtering, gave rise to local Si3N4 crystal features and a low effective work function (EWF) for promoting surface dipoles with electronegative carbon-containing groups. In the H plasma environment during diamond growth, the local Si3N4 crystal was amorphized, and the N atoms escaped as a result of atomic H and the high temperature. At the same time, C atoms diffused into the SiN x and formed C–Si bonds (49.7% of the total C bonds) by replacing N–Si and Si–Si, thus increasing the direct nucleation density of the diamond grains. The diamond thin film grew rapidly and uniformly, with a grain size of approximately 2 μm in mixed orientation, and the stress of the 2-inch SiC-on-diamond wafer was extremely low (to ∼0.1–0.2 GPa). In comparison, partially connected diamond grains (>10 μm) on the bare SiC in the preferential (110) orientation resulted in a film with twin-grain features and significant stress, which was associated with the hexagonal lattice interface of 4H–SiC. These results are considered the material and surface/interface bases for actively controlling wafer fabrication and enhancing the heat dissipation of SiC and GaN/SiC electronics.

Stress and Stress Gradient Control Technology of Multi-Layer Metal-SiC Thin Film

Stress Control and Anti-erosion Characteristics of PECVD SiC Thin Film

Control of stress response in a rotating infinite hollow multilayered piezoelectric cylinder

Modifying Residual Stress and Stress Gradient in LPCVD SI3N 4 Film with Ion Implantation

Methods of producing plasma enhanced chemical vapor deposition silicon nitride thin films with high compressive and tensile stress

Study of Local Stress Using Stress-Absorbing Si Diaphragm

Finite element simulation of thermal stress in RF magnetron sputtered SiC coating as tritium penetration barrier

Residual Stress in Sputtered Silicon Oxycarbide Thin Films

Stressor SiNx contact etch stop layer (CESL) technology and its application in nano-scale transistors

Stress and Crystallization of Plasma Enhanced Chemical Vapour Deposition Nanocrystalline Silicon Films.

Generation and distribution of residual stress during nano-grinding of monocrystalline silicon

Preparation strategy for low-stress and uniform SiC-on-diamond wafer: A silicon nitride dielectric layer

Producing Silicon Carbide Micro and Nanostructures by Plasma‐Free Metal‐Assisted Chemical Etching

Interface design to tune stress distribution for high performance diamond/silicon carbide coated cemented carbide tools

Experimental and MD simulation study of surface residual stress and surface quality of SiCp/Al in pulsed laser-ultrasonic assisted grinding

Fabrication and test of PECVD SiC resonator

Origins and characterization techniques of stress in SiC crystals: A review

Comprehensive Stress Effect of Thin Coatings and Silicon-Carbon Lattice Mismatch on Nano-Scaled Transistors with Protruding Poly Gate

Surface Engineering of Polycrystalline Silicon for Long-Term Mechanical Stress Endurance Enhancement in Flexible Low-Temperature Poly-Si Thin-Film Transistors.

Residual Stress in Amorphous and Nanocrystalline Si Films Prepared by PECVD with Hydrogen Dilution

Ultra-high strain in epitaxial silicon carbide nanostructures utilizing residual stress amplification