Spectroscopic Analysis of Film Stress Mechanism in PECVD Silicon Nitride

Bo Eun Jang,Sang Jeen Hong

DOI: https://doi.org/10.1007/s42341-018-0006-z

2018-01-29

Transactions on Electrical and Electronic Materials

Abstract:We investigated the stoichiometry of silicon nitride film deposited by plasma-enhanced chemical vapor deposition (PECVD). Lowering the NH3/SiH4 gas flow ratio resulted in slightly Si-rich film due to the lack of reactive nitrogen in the plasma. It may reduce the film stress, but the refractive index of Si-rich nitride film can be increased by 50% at its maximum. The aforementioned stress adjustment methods are made practically useful by performing multiple experiments to achieve immediate stress release. It suffers from figures of merit of the PECVD-deposited silicon nitride film. Thin film stress was measured both before and after deposition, and the stoichiometry of deposited film on wafer was measured by Fourier transform-infrared (FT-IR) spectroscopy, while plasma chemistry and its conditions were monitored in real time during the deposition process. The purpose of this study was to correlate the optically measured film stress with the stoichiometry of the deposited film and plasma chemistry. Nitrogen-rich plasma processes tend to have higher tensile stress, and FT-IR measurements are in accordance with the measured mechanical stresses of the wafers.

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