Abstract:The thermal process of amorphous silicon thin film crystallization when combined with an aluminum (Al) film using a continuous wave (CW) laser is accompanied by additional interactions induced by the aluminum layer. This technique is frequently employed to optimize the crystallization process and enhance the quality of crystalline silicon by combining the thermodynamic effects of laser annealing with metal-induced crystallization (MIC). Hydrogenated amorphous silicon (a-Si:H) films were deposited using the plasma-enhanced chemical vapor deposition (PECVD) process on Corning glass substrates. An aluminum overcoat was deposited on the films. The specimens were irradiated with a continuous wave (CW) argon-ion (Ar +) laser beam of varying power density and duration. The samples were then annealed at 250 °C for 15 min to convert the amorphous silicon into polysilicon film. The grain size of the polycrystalline silicon films varies by varying the laser power density and the exposure time. The polysilicon grains acquired diameters ranging from 0.4 to 1.25 μm when the laser power density was set between 74.7 W/cm 2 and 94.3 W/cm 2 . The grains with a size ranging between 1 and 2.5 μm showed plate-like and dendritic-like configurations when laser power densities changed between 31.4 and 74.7 W/cm 2 . The X-ray diffraction analysis (XRD) analysis revealed polycrystalline silicon with expected relative strengths.

Improving stability of amorphous silicon using chemical annealing with helium

Nanocrystalline Si Films and Devices Produced Using Chemical Annealing with Helium

Modulation of Interfacial and Electrical Properties of ALD-derived HfAlO/Al2O3/Si Gate Stack by Annealing Temperature

High-Pressure Water-Vapor Annealing for Enhancement of A-Si:H Film Passivation of Silicon Surface

Recent Progresses on the Stability of Hydrogenated Amorphous Silicon Thin Films

Influence of Precursor A-Si:H Dehydrogenation on the Aluminum Induced Crystallization Process

Novel Sandwich Structure for Aluminum Induced Crystallization of Amorphous Silicon Thin Films at Low Temperature

Influence of annealing on microstructures and photoluminescence of nano-composite silicon film

Room Temperature Growth of Hydrogenated Amorphous Silicon Films by Dielectric Barrier Discharge Enhanced Cvd

Device-grade A-Sige:H Alloys Prepared by Nanometer Deposition/h2 Plasma Annealing Method

Structural Evolution of A-Si:H/sio 2 Multilayers Upon Step by Step Thermal Annealing

Confined high-pressure chemical deposition of hydrogenated amorphous silicon

Annealing Effect on Optical and Electronic Properties of Silicon Rich Amorphous Silicon-Carbide Films

Effect of Hydrogen Plasma for Obtaining High Quality A-Sige:H Alloys

Crystallization of Hydrogenated Amorphous Silicon Thin Films Using Combined Continuous Wave Laser and Thermal Annealing

High Rate Deposition of Stable Hydrogenated Amorphous Silicon in Transition from Amorphous to Microcrystalline Silicon

Structure and Electronic States in A-Si:H Thin Films

High temperature annealing of hydrogenated amorphous silicon carbide thin films

The Effect Of Thermal Annealing On Crystallization In A-Si : H/Sio2 Multilayers By Using Layer By Layer Plasma Oxidation

Ion-irradiation-induced athermal annealing of helium bubbles in SiC

Influence of NH3 Annealing on the Chemical States of HfO2/Al2O3 Stacks Studied by X-ray Photoelectron Spectroscopy