Abstract:Hydrogenated amorphous carbon films have been widely investigated as one of cathode field emission materials.It has been recognized that the film microstructures,surface chemical compositions and even the film thickness can strongly influence the electron emission characteristics from amorphous carbon materials.By using Ar,H and O_2 plasma to treat amorphous carbon film surface,the field emission characteristics can be modified obviously due to the modification of the film surface configurations and morphology.It has been verified that doping of nitrogen in the films is one of the effective ways to improve the field emission characteristics.In this paper,we prepared hydrogenated amorphous carbon films in conventional r.f.plasma enhanced chemical vapor deposition(PECVD) system at low substrate temperature and performed N type in situ doping on the surface of carbon films by nitrogen plasma surface treatments.The change of the surface structures and bonding configurations were investigated by different measurements techniques for samples with and without nitrogen surface doping.The field electron emission characteristics of the films before and after nitrogen surface doping were studied and it is shown that the field emission properties had been improved obviously,especially the threshold electric field for electron emission which is defined as the electric field at the emission current density of 10~(-6) A/cm~2.The threshold electric field is reduced from 3.2 V/μm to 1.0 V/μm after nitrogen surface doping.Preliminarily analysis showed that the improvement of field emission properties can be attributed to the decrease of the effective work function of the front surface of amorphous carbon film due to the formation of N-related states on the surface after nitrogen plasma surface doping.

Improvement of electron field emission from amorphous carbon films due to hydrogen plasma chemical annealing effect

The effect of hydrogen plasma chemical annealing on electron field emission of amorphous carbon films

Effect of Hydrogen Treatment on the Field Emission of Amorphous Carbon Film

Stable Field Emission with Low Threshold Field from Amorphous Carbon Films Due to Layer-by-layer Hydrogen Plasma Annealing

Study on effect of hydrogen treatment on amorphous carbon film using scanning probe microscopy

Preparation of Amorphous Carbon Films by Layer-By-Layerhydrogen Plasma Annealing Method and Their Luminescence Properties

Photoluminescence of Amorphous Carbon Films Fabricated by Layer-By-Layer Hydrogen Plasma Chemical Annealing Method

VERY LOW THRESHOLD ELECTRON FIELD EMISSION FROM AMORPHOUS CARBON FILMS WITH HYDROGEN DILUTION

Vacuum Electron Emission with Low Turn-On Electric Field from Hydrogenated Amorphous Carbon Thin Films

The Effect of Hydrogen Dilution on the Field Emission from Hydrogenated Amorphous Carbon Films

Electron Field Emission Studies from Amorphous Carbon Thin Films

A Field Emission Study of the Critical Parameters of Amorphous Carbon Films Deposited on a Variety of Carbonaceous Substrates

The Effect of Relatively Low Hydrogen Dilution on the Properties of Carbon-Rich Hydrogenated Amorphous Silicon Carbide Films

The Improvements in Field Electron Emission Characteristics of Amorphous Carbon Films due to Nitrogen Surface Doping

Effect of Nitrogen Surface Doping on the Work Function and Field Emission of Hydrogenated Amorphous Carbon Films

Microstructures and Photoluminescence of Hydrogenated Amorphous Carbon Films Produced by Using Organic Hydrocarbon Source

The Influence of Radio Frequency Power on the Characteristics of Carbon-Rich Hydrogenated Amorphous Silicon Carbide Films

Properties of Tetrahedral Amorphous Carbon Films Deposited in a Filtered Cathodic Arc in the Presence of Hydrogen

Gas Barrier Properties of Amorphous Hydrogenated Carbon Films by Plasma -Enhanced CVD

Fabrication of amorphous carbon films by using organic hydrocarbon source

The change of photoluminescence characteristics of amorphous carbon films due to hydrogen dilution