Abstract:Hydrogenated amorphous carbon films have been widely investigated as one of cathode field emission materials.It has been recognized that the film microstructures,surface chemical compositions and even the film thickness can strongly influence the electron emission characteristics from amorphous carbon materials.By using Ar,H and O_2 plasma to treat amorphous carbon film surface,the field emission characteristics can be modified obviously due to the modification of the film surface configurations and morphology.It has been verified that doping of nitrogen in the films is one of the effective ways to improve the field emission characteristics.In this paper,we prepared hydrogenated amorphous carbon films in conventional r.f.plasma enhanced chemical vapor deposition(PECVD) system at low substrate temperature and performed N type in situ doping on the surface of carbon films by nitrogen plasma surface treatments.The change of the surface structures and bonding configurations were investigated by different measurements techniques for samples with and without nitrogen surface doping.The field electron emission characteristics of the films before and after nitrogen surface doping were studied and it is shown that the field emission properties had been improved obviously,especially the threshold electric field for electron emission which is defined as the electric field at the emission current density of 10~(-6) A/cm~2.The threshold electric field is reduced from 3.2 V/μm to 1.0 V/μm after nitrogen surface doping.Preliminarily analysis showed that the improvement of field emission properties can be attributed to the decrease of the effective work function of the front surface of amorphous carbon film due to the formation of N-related states on the surface after nitrogen plasma surface doping.

Effect of Nitrogen Surface Doping on the Work Function and Field Emission of Hydrogenated Amorphous Carbon Films

The Improvements in Field Electron Emission Characteristics of Amorphous Carbon Films due to Nitrogen Surface Doping

The Effect of Hydrogen Dilution on the Field Emission from Hydrogenated Amorphous Carbon Films

A Field Emission Study of the Critical Parameters of Amorphous Carbon Films Deposited on a Variety of Carbonaceous Substrates

Nitrogen Modification of Hydrogenated Amorphous Carbon Films

Nitrogen-Concentration Modulated Interface Quality, Band Alignment and Electrical Properties of Hftion/Ge Gate Stack Pretreated by Trimethylaluminum Precursor

Field Emission from As Grown and Nitrogen Incorporated Tetrahedral Amorphous Carbon/Silicon Heterojunctions Grown Using A Pulsed Filtered Cathodic Vacuum Arc Technique

Nitrogenated Amorphous Carbon As a Semiconductor

Enhanced Field Electron Emission from Nitrogen Doped Tetrahedral Amorphous Carbon Film

Substitutional Nitrogen Doping of Tetrahedral Amorphous Carbon

Improvement of electron field emission from amorphous carbon films due to hydrogen plasma chemical annealing effect

Effect of Hydrogen Treatment on the Field Emission of Amorphous Carbon Film

The effect of hydrogen plasma chemical annealing on electron field emission of amorphous carbon films

Electron Field Emission Studies from Amorphous Carbon Thin Films

The microstructural dependence of the opto-electronic properties of nitrogenated hydrogenated amorphous carbon thin films

Surface Nitrogen Functionality for the Enhanced Field Emission of Free-Standing Few-Layer Graphene Nanowalls

VERY LOW THRESHOLD ELECTRON FIELD EMISSION FROM AMORPHOUS CARBON FILMS WITH HYDROGEN DILUTION

Field Emission Properties of Nanocomposite Carbon Nitride Films

Hydrogen-Free Amorphous-Carbon Preparation and Properties

Study on effect of hydrogen treatment on amorphous carbon film using scanning probe microscopy

Electronic Behaviour and Field Emission of A-C:H:n/si Heterojunctions