Abstract:Hydrogenated amorphous carbon films have been widely investigated as one of cathode field emission materials.It has been recognized that the film microstructures,surface chemical compositions and even the film thickness can strongly influence the electron emission characteristics from amorphous carbon materials.By using Ar,H and O_2 plasma to treat amorphous carbon film surface,the field emission characteristics can be modified obviously due to the modification of the film surface configurations and morphology.It has been verified that doping of nitrogen in the films is one of the effective ways to improve the field emission characteristics.In this paper,we prepared hydrogenated amorphous carbon films in conventional r.f.plasma enhanced chemical vapor deposition(PECVD) system at low substrate temperature and performed N type in situ doping on the surface of carbon films by nitrogen plasma surface treatments.The change of the surface structures and bonding configurations were investigated by different measurements techniques for samples with and without nitrogen surface doping.The field electron emission characteristics of the films before and after nitrogen surface doping were studied and it is shown that the field emission properties had been improved obviously,especially the threshold electric field for electron emission which is defined as the electric field at the emission current density of 10~(-6) A/cm~2.The threshold electric field is reduced from 3.2 V/μm to 1.0 V/μm after nitrogen surface doping.Preliminarily analysis showed that the improvement of field emission properties can be attributed to the decrease of the effective work function of the front surface of amorphous carbon film due to the formation of N-related states on the surface after nitrogen plasma surface doping.

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