Abstract:Porous Si (PS) layers are prepared by stain etching in a HF/NaNO2 solution on both p- and n-type crystal Si substrates, and are characterized by photoluminescence (PL), electron paramagnetic resonance (EPR), and infrared absorption (IR) spectroscopy. The PL spectra under 488 nm laser excitation exhibit a strong peak at 680–720 nm for various samples of different substrate parameters and remain stable upon aging in air or γ irradiation; as-etched (∼20 min in air before measurement) and aged (for up to six months) samples show no detectable EPR signal but the γ-irradiated samples show an isotropic g=2.006 signal of peak-to-peak linewidth of 1.1 mT supporting an amorphous Si structure; the IR spectra show both hydrogen and oxygen related IR modes in the as-etched samples and the former decreases with aging time in air while the latter increases. Comparing our results with those of anodically etched PS samples we conclude that: (1) the PL peak position of the stain PS seems to be unique and stable as compared with that of the anodic PS varying in 620–830 nm; (2) the isotropic EPR signal of the stain PS reflects no crystallinity, in contrast with the anisotropic signal of the anodic PS; and (3) obvious oxidation in the as-etched stain PS is also in contrast with the nonobservation of oxygen-related IR modes in the as-etched anodic PS. We discuss the results in terms of structural properties and PL mechanism of PS.

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