Low-temperature Crystallization of High Performance Pb0.4Sr0.6TiO3 Films Compatible with the Current Silicon-Based Microelectronic Technology

Kui Li,Denis Remiens,Xianlin Dong,Jean Costecalde,Nossikpendou Sama,Tao Li,Gang Du,Ying Chen,Genshui Wang
DOI: https://doi.org/10.1063/1.4807792
IF: 4
2013-01-01
Applied Physics Letters
Abstract:This investigation presents a simple approach to realize the low temperature crystallization of Pb0.4Sr0.6TiO3 thin films at 400 °C by taking advantage of well controlled lead excess and kinetic-driving-force compensated thermodynamics crystalline via sputtering deposition. The thin films prepared at low temperature show fine-grained micro-structure because of the suppressed grain growth, furthermore, the intrinsic dielectric response can be modulated by the distinct level of crystallinity. The film processed at 450 °C exhibited a dielectric constant of 435 and high figure merit of 130 at 400 kV/cm, superior ferroelectric property, and stable performance with temperature and frequency.
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