Abstract:It is relatively easy to obtain highly oriented/textured Ba(ZrxTi1–x)O3 (BZT) films by magnetron sputtering, but it is complicated to control the composition of these sputtered oriented films. Here, a series of BZT ceramic targets with different ingredients (x = 0.05, 0.1, 0.15, 0.2, 0.25, and 0.3) and a BaTiO3 (x = 0) target were fabricated by solid-state sintering. Then, the corresponding BZT thin films were deposited on LaNiO3 (LNO) buffered Pt/Ti/(001)Si substrates adopting radio-frequency magnetron sputtering. Benefit from the prefabricated (001)-LNO buffer layer and optimized BZT film preparation process, all BZT films exhibit highly (00l) preferred orientation. However, the degree of orientation, lattice parameter, dielectric properties, ferroelectric behaviors, and energy-storage characteristics are all highly dependent on the Zr content of BZT films sputtered by targets with the same composition. (00l)-oriented BZT films with relatively low Zr content have a better crystalline structure [narrower full width at half maximum (FWHM), larger grains]. It is also found that the rising of the Zr content in (00l)-oriented BZT films will result in a larger out-of-plane lattice parameter, and these results indicate that the doping amount of Zr will strongly change the heterointerface stress/strain states and the growth mode of the oriented films, and then effectively tailor their electric performances.

Low-temperature deposition of (110)-oriented barium titanate thin films and their electrical properties

Crystallographic Orientation Dependence of Dielectric Response in Lead Strontium Titanate Thin Films

Effect of Sputtering-Target Composition on the Structure, Dielectric, Ferroelectric, and Energy Storage Properties of Highly (00L)-Oriented Ba(ZrxTi1–x)O3 Films

In situ preparation of high dielectric constant, low-loss ferroelectric BaTiO3 films on Si at 500°C

In Situ Preparation Of High Dielectric Constant, Low-Loss Ferroelectric Batio3 Films On Si At 500 Degrees C

Low-temperature synthesis of barium titanate thin films by nanoparticles electrophoretic deposition

(111)-Oriented Batio3 Thin Films Hydrothermally Formed On Tio2/Si Substrate

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Chemically Deposited (100)-Oriented BaTiO3 Films with Highly Concentrated Solution Using High Crystallinity BaTiO3 As a Buffer Layer

In Situ Preparation of High Quality BaTiO3 Dielectric Films on Si at 350–500 °C

Dielectric and tunable properties of highly (110)-oriented (Ba 0.65 Sr 0.35 )TiO 3 thin films deposited on Pt/LaNiO 3 /SiO 2 /Si substrates

Dielectric and Tunable Properties of Highly (110)-Oriented

Structural Behavior of Thin BaTiO3 Film Grown at Different Conditions by Pulsed Laser Deposition

Structural, Dielectric, and Insulating Properties of Barium Strontium Titanate Thin Films Grown on Various Oriented Laalo3 Substrates

Orientation and Electrode Configuration Dependence on Ferroelectric, Dielectric Properties of BaTiO3 Thin Films

Electrical properties and crystal structure of (Ba,Sr)TiO3 films prepared at low temperatures on a LaNiO3 electrode by radio-frequency magnetron sputtering

Preparation of (001) preferentially oriented titanium thin films by ion-beam sputtering deposition on thermal silicon dioxide

Dielectric and piezoelectric properties of highly (100)-oriented BaTiO3 thin film grown on a Pt/TiOx/SiO2/Si substrate using LaNiO3 as a buffer layer

Low-temperature Preparation of BaTiO 3 Thin Film by MOD and Hydrothermal Treatment