The influence of film thickness and process temperature on c -axis orientation of Bi 3 TiTaO 9 thin films

Dan Xie,Zhigang Zhang,Tianling Ren,Litian Liu
DOI: https://doi.org/10.1007/s10971-006-0202-x
2006-01-01
Journal of Sol-Gel Science and Technology
Abstract:Bi-layered ferroelectric Bi 3 TiTaO 9 (BTT) thin films with different thickness (ranging from 100 to 400 nm) were successfully fabricated on Pt(111)/TiO 2 /SiO 2 /(100)Si substrates using chemical solution deposition (CSD) technique at different annealing temperatures. The c -axis orientation of the films was affected by film thickness and process temperature. The thinner the film and the higher the process temperature, the higher the c -axis orientation. With the increase of film thickness, the stress decreased but the film roughness increased, which led to the decrease of c -axis orientation of films. BTT films annealed at 800°C were found to have much improved remament polarization ( P r ) than that of films annealed at 650 and 750°C. The P r and coercive field ( E c ) values were measured to be 2 μC/cm 2 and 100 kV/cm, respectively. BTT films showed well-defined ferroelectric properties with grain size larger than 100 nm.
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