Abstract:c-axis epitaxial and polycrystalline Sr3Bi4Ti6O21 (SBTi) thin films were fabricated on (001)SrTiO3 (STO) single-crystal substrates and Pt/Ti-2/SiO2/Si substrates respectively, by pulsed laser deposition (PLD). Structures of the films were systematically characterized by x-ray diffraction (XRD), including theta-2theta-scans, rocking curve scans and phi-scans, atomic force microscopy and transmission electron microscopy (TEM). The epitaxial orientation relation of the SBTi films on STO is established by selected-area electron diffraction and XRD phi-scans to be (001)SBTi parallel to (001)STO, [1(1) over bar 0 ]SBTi parallel to [010]STO. Cross-sectional high-resolution TEM studies on the epitaxial SBTi film revealed that SBTi is a single-phase material. A special kind of irrational atomic shift along the [001] direction was observed and is discussed in detail. By using an evanescent microwave probe (EMP), the room-temperature dielectric constant of the epitaxial SBTi film was measured to be 211 +/- 20. Excellent electrical properties of the polycrystalline SBTi films with Pt bottom and top electrodes were exhibited: the P-r and E-c values were 4.1 muC cm(-2) and 75 kV cm(-1) respectively, the nonvolatile polarizations decreased by less than 5% after 2.22 x 10(9) switching cycles and the dielectric constant and loss tangent were 363 and 0.04 at 100 kHz.

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Preparation of PZT Thick Film by a High Speed Sol-gel Method

PREPARATION OF CALCIUM DOPED STRONTIUM BISMUTH TITANATE FERROELECTRIC THIN FILMS BY SOL-GEL PROCESSING

Microstructure And Ferroelectric Properties Of Sol-Gel Derived Bi3.15nd0.85ti3o12 Thin Films On Pt/Ti/Sio2/Si(100)

Characterization of (100)-Oriented BiScO3–PbTiO3 Thin Films Synthesized by a Modified Sol-Gel Method

Structural and electrical properties of <i>c</i>-axis epitaxial and polycrystalline Sr<sub>3</sub>Bi<sub>4</sub>Ti<sub>6</sub>O<sub>21</sub> thin films

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Fabrication and Properties of Sol–Gel‐Derived BiScO3–PbTiO3 Thin Films

The influence of film thickness and process temperature on c -axis orientation of Bi 3 TiTaO 9 thin films

Crystallization, phase evolution and ferroelectric properties of sol-gel-synthesized Ba(Ti0.8Zr0.2)O3-x(Ba 0.7Ca0.3)TiO3 thin films

Structural and electrical properties of c-axis epitaxial and polycrystalline Sr 3 Bi 4 Ti 6 O 21 thin films

Preparation and Study of Oriented TiO2 Thin Film

Preparation and Properties of Bi2ti2o7 Thin Films by Chemical Solution Deposition

Structure and Electrical Properties of (100)-Oriented BiSc1/2Fe1/2O3–PbTiO3 Thin Films with Different Thickness Via Sol–gel Method

Ferroelectric Properties and Fatigue of Bi4Ti3O12 Thin Films Prepared by Sol-Gel Method

The oriented growth of PbTiO3 thin films deposited by a sol-gel process on substrates without lattice match

Characterization of (100)-Oriented 0.63bimg1/2ti1/2o3–0.37pbtio3 Piezoelectric Films by a Sol–gel Process

Orientation Control in Sol–Gel‐Derived BiScO3–PbTiO3 Thin Films

The influence of film thickness and process temperature on <i>c</i> -axis orientation of Bi<sub>3</sub>TiTaO<sub>9</sub> thin films

Preparation and ferroelectric properties of (124)-oriented SrBi4Ti4O15 ferroelectric thin film on (110)-oriented LaNiO3 electrode