The influence of film thickness and process temperature on <i>c</i> -axis orientation of Bi<sub>3</sub>TiTaO<sub>9</sub> thin films

Dan Xie,Zhigang Zhang,Tianling Ren,Litian Liu
DOI: https://doi.org/10.1007/s10971-006-0202-x
2007-01-01
Journal of Sol-Gel Science and Technology
Abstract:Bi-layered ferroelectric Bi3TiTaO9 (BTT) thin films with different thickness (ranging from 100 to 400 nm) were successfully fabricated on Pt(111)/TiO2/SiO2/(100)Si substrates using chemical solution deposition (CSD) technique at different annealing temperatures. The c-axis orientation of the films was affected by film thickness and process temperature. The thinner the film and the higher the process temperature, the higher the c-axis orientation. With the increase of film thickness, the stress decreased but the film roughness increased, which led to the decrease of c-axis orientation of films. BTT films annealed at 800 degrees C were found to have much improved remament polarization (P-r ) than that of films annealed at 650 and 750 degrees C. The P-r and coercive field (E-c ) values were measured to be 2 mu C/cm(2) and 100 kV/cm, respectively. BTT films showed well-defined ferroelectric properties with grain size larger than 100 nm.
What problem does this paper attempt to address?