Ferroelectric Bi3.99ti2.97v0.03o12 Thin Films Prepared By Pulsed Laser Deposition

Dy Wang,Js Zhu,Hlw Chan,Cl Choy
DOI: https://doi.org/10.1080/10584580190044065
2002-01-01
Integrated Ferroelectrics
Abstract:Vanadium-modified bismuth titanate Bi3.99Ti2.97V0.03O12 (BTV) thin films of about 400 nm thickness were grown on Pt (111)/TiO2/SiO2/Si(100) substrates using the pulsed laser deposition technique. The hysteresis, fatigue and retention behavior of the BTV films were investigated. The appearance of the (117) and (00 (10) under bar) reflections in the x-ray diffraction pattern indicates that the crystalline phase is formed at a low temperature of 600degreesC. Scanning electron microscope observations reveal that the films annealed at higher temperature have a larger grain size. The films annealed at 650degreesC exhibits a well defined hysteresis loop with remnant polarization 2P(r) and coercive field E-c of 42 muC/cm(2) and 110 kV/cm, respectively. The polarization fatigue performance of this film is reasonable at an applied voltage of 7 V (similar to170 kV/cm), but it deteriorates at higher electric fields. At an applied electric field of 250 kV/cm, the BTV film shows good retention characteristics up to 10(5) s. At 100 kHz the relative permittivity and loss factor are 204 and 0.014, respectively.
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