Electrical Properties of Chemical-Solution-derived Bi3.54Nd0.46Ti3O12 Ferroelectric Thin Films

D Wu,Yd Xia,Ad Li,Zg Liu,Nb Ming
DOI: https://doi.org/10.1063/1.1622777
IF: 2.877
2003-01-01
Journal of Applied Physics
Abstract:Bi 3.54 Nd 0.46 Ti 3 O 12 (BNdT) thin films were prepared on Pt/TiO2/SiO2/Si substrates by chemical solution deposition. X-ray diffraction measurement indicated the polycrystalline nature of these films. Ferroelectric, dielectric, and leakage current characteristics of Pt/BNdT/Pt capacitors were studied. The remanent polarization and coercive field were 8.5 μC/cm2 and 47 kV/cm, respectively, at 5 V stimulative voltage. The relative permittivity and dissipation factor at 100 kHz were around 510 and below 0.02, respectively. Fatigue free behavior of BNdT thin films was confirmed by essentially constant polarizations during 100 kHz bipolar switching up to 1.4×1010 switches. The dependence of leakage current on dc voltage suggested Schottky and Poole-Frenkel emission behavior below 100 kV/cm, followed by dielectric breakdown.
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