Preparation and Characterization for B3.15Nd0.85Ti3O12 Thin Film by Sol-Gel Process

Yong-yuan Zang,Dan Xie,Ye-hui Xiao,Kan-hao Xue,Tian-ling Ren,Li-tian Liu
DOI: https://doi.org/10.1109/edst.2007.4289793
2007-01-01
Abstract:B3.15Nd0.85Ti3O12 (BNdT) thin films were prepared on Pt(100)/Ti/SiO2/Si(100) substrate by sol-gel process. Dense and uniform films were achieved by rapidly thermal annealing at 750 degrees C. The perovskite crystalline and the microstructure of the thin films were investigated by XRD, SEM, and AFM. The BNdT thin film capacitors with a Pt electrode show excellent ferroelectric properties. Well-saturated polarization-electric field (P-E) switching curves were examined in the BNdT thin films. The remanent polarization and the coercive field were 43 mu C/cm(2) and 66kv/cm at an applied voltage of 8v, respectively, in the films annealed at 750 degrees C. The dielectric constant and the dissipation factor were 583 and 0.07 respectively, measured at 100KHZ.
What problem does this paper attempt to address?