Structural and Electrical Properties of Bi3.25la0.75ti3o12 and Bi3.25pr0.75ti3o12 Thin Films for Memory Applications

D Wu,AD Li,ZG Liu,NB Ming
DOI: https://doi.org/10.1080/10584580215356
2002-01-01
Integrated Ferroelectrics
Abstract:In this work, Bi3.25La0.75Ti3O12 (BLT) and Bi3.25Pr0.75Ti3O12 (BPT) thin films were prepared by chemical solution deposition and characterized by X-ray diffraction, scanning electron microscope and electrical measurements. Layered perovskite BLT and BPT films can be achieved by 180 s annealing at a temperature as low as 650degreesC. Both BPT and BLT films are composed of closely packed spherical grains. BPT shows larger remnant polarization (Pr ) and smaller coercive field. The Pr values of 700degreesC annealed BLT and BPT films are 18.3 muC/cm(2) and 20.5 muC/cm(2) , respectively, while BLT films show better-saturated hysteresis loops. The leakage current density of BPT films is significantly (about one order) lower than that of BLT. The dielectric properties of BLT and BPT films were measured and compared. Both films exhibit large dielectric constant and small loss tangent. Under bipolar switching cycles, BLT films showed little polarization reduction but a 30% polarization loss was observed for BPT films after 2x10(9) cycles.
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