Characterization And Properties Of Lanthanum-Substituted Bismuth Titanate Ferroelectric Thin Films For Feram Application

Dan Xie,Tianling Ren,Zhigang Zhang,Litian Liu
DOI: https://doi.org/10.1109/icsict.2004.1435281
2004-01-01
Abstract:In the paper, polycrystalline and c-orientated Bi3.4La0.6Ti3O12 (BLT) thin films with uniform composition and thickness were prepared on Si and Pt/Ti/SiO2/Si substrates using a modified Sol-Gel technique. X-ray diffraction (XRD) studies indicated the formation of the Bi-based layered structure for BLT. The microstructure and surface morphologies of thin films significantly Nary with the type of substrates. The grain growth and orientation of BLT thin films in different substrates intensively affect on the ferroelectric properties. The remanent polarization (P,) of BLT thin films on Pt/Ti/SiO2/Si and Si substrates is about 1.23 mu C/cm(2) and 4.54 mu C/cm(2), respectively. The higher the c-axis orientation ratio of BLT films, the less the value of P, is. The fatigue properties remain nearly constant after 1.44 x 10(12) switching cycles. It indicates that lanthanum-substituted bismuth titanate is a kind of candidate material for FeRAM application.
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