Structural and electrical properties of <i>c</i>-axis epitaxial and polycrystalline Sr₃Bi₄Ti₆O₂₁ thin films

S T Zhang,Y F Chen,H P Sun,X Q Pan,W S Tan,Z G Liu,N B Ming

DOI: https://doi.org/10.1088/0953-8984/15/8/307

2003-01-01

Abstract:c-axis epitaxial and polycrystalline Sr3Bi4Ti6O21 (SBTi) thin films were fabricated on (001)SrTiO3 (STO) single-crystal substrates and Pt/Ti-2/SiO2/Si substrates respectively, by pulsed laser deposition (PLD). Structures of the films were systematically characterized by x-ray diffraction (XRD), including theta-2theta-scans, rocking curve scans and phi-scans, atomic force microscopy and transmission electron microscopy (TEM). The epitaxial orientation relation of the SBTi films on STO is established by selected-area electron diffraction and XRD phi-scans to be (001)SBTi parallel to (001)STO, [1(1) over bar 0 ]SBTi parallel to [010]STO. Cross-sectional high-resolution TEM studies on the epitaxial SBTi film revealed that SBTi is a single-phase material. A special kind of irrational atomic shift along the [001] direction was observed and is discussed in detail. By using an evanescent microwave probe (EMP), the room-temperature dielectric constant of the epitaxial SBTi film was measured to be 211 +/- 20. Excellent electrical properties of the polycrystalline SBTi films with Pt bottom and top electrodes were exhibited: the P-r and E-c values were 4.1 muC cm(-2) and 75 kV cm(-1) respectively, the nonvolatile polarizations decreased by less than 5% after 2.22 x 10(9) switching cycles and the dielectric constant and loss tangent were 363 and 0.04 at 100 kHz.