Epitaxial Growth of Sol-Gel Derived BiScO3–PbTiO3 Thin Film on Nb-doped SrTiO3 Single Crystal Substrate

Hai Wen,Xiaohui Wang,Caifu Zhong,Like Shu,Longtu Li
DOI: https://doi.org/10.1063/1.2739326
IF: 4
2007-01-01
Applied Physics Letters
Abstract:Bi Sc O 3 – Pb Ti O 3 (BSPT) thin film was grown on electrical conductive Nb-doped SrTiO3 (100) (Nb-STO) single crystal substrate by a sol-gel method. The x-ray diffraction and high resolution transmission electron microscopy proved the epitaxial growth relation between the BSPT thin film and Nb-STO substrate. The [001]-epitaxial BSPT thin film exhibited considerable high remanent polarization of 74μC∕cm2 and effective piezoelectric coefficient d33* of 130pm∕V, which were much higher than those of the (100)-oriented BSPT thin film grown on traditional silicon substrate.
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