Abstract:Strontium titanate (SrTiO$_{3}$, STO) stands out as a promising material for various electronic applications thanks to its exceptional dielectric properties. Molecular beam epitaxy is one of the few techniques which allows epitaxial growth of STO directly on industry-relevant silicon substrates. However, maintaining precise stoichiometry and high crystalline quality in this process remains a significant challenge. Establishing this is essential to obtain STO with bulk-like dielectric properties and to minimize leakage current and optical absorbance. In this study, the importance of cationic stoichiometry and the effect of thickness are investigated for STO thin films epitaxially grown on silicon. We employed real-time reflection high-energy electron diffraction (RHEED) as a feedback loop mechanism to counteract Sr source oxidation and maintain a constant flux. Additionally, high-temperature post-growth annealing treatments in O$_{2}$ were investigated to promote layer relaxation and reduce oxygen vacancy concentration, thereby improving the physical, electrical, and optical properties of stoichiometric STO. As a result, high-quality STO thin films exceeding 100 nm were successfully fabricated featuring a bulk-like out-of-plane lattice parameter and refractive index, as well as rocking curve full width at half maximum below 0.2°, smooth surface (R$_{q}$ < 0.2 nm) and a leakage current density below 1E-7 A/cm$^{2}$.

EPITAXIAL GROWTH OF <font>SrTiO</font><sub>3</sub> THIN FILMS BY SOL-GEL SYNTHESIS ON <font>LaAlO</font><sub>3</sub> AND <font>Ni</font> SUBSTRATES

Growth of SrTiO3 Thin Films on BaxSr1−xTiO3 (x=0.3, 0.5) Seed Layers on Ni (200) Substrates Using Spin Coating Technique

Stoichiometry and Thickness of Epitaxial SrTiO$_{3}$ on Silicon (001): an Investigation of Physical, Optical and Electrical Properties

Epitaxial Growth of Sol-Gel Derived BiScO3–PbTiO3 Thin Film on Nb-doped SrTiO3 Single Crystal Substrate

Preparation of SrTiO3 Buffer Layers on BaxSr1−xTiO3 Seed Layers Buffered Ni Tapes by Chemical Solution Deposition

Growth of (Ba,Sr)TiO 3 Thin Films by MOCVD: Stoichiometry Effects

Preparation of Epitaxial Metallic LaNiO3 Films on SrTiO3 by Metalorganic Decomposition for the Oriented Growth of PbTiO3

Substrate Effects on Surface Morphology in (La2/3-X Y-X) (Ca1/3-Y Sr-Y) Mno3 Films

Epitaxial growth of ferroelectric PbTiO3 thin films by metalorganic chemical vapor deposition

EPITAXIAL GROWTH OF La 0.5 Sr 0.5 CoO 3 THIN FILMS AND ITS MECHANISMS

Initial Growth of Bi4 Lati3 Feo15 Thin Films on Srtio3, Mgo and Ysz Substrates

Preparation and Crystalline Qualities of SrTiO3 and CeO2 Buffer Layers Fabricated on Ni Substrates Via a Sol–gel Method for YBCO Coated Conductors

Pbtio3 Thin-Films Prepared By Metalorganic Chemical-Vapor-Deposition On Laalo3

SUBSTRATE EFFECTS ON SURFACE MORPHOLOGY IN (<font>La</font><sub>2/3-x</sub><font>Y</font><sub>x</sub>) (<font>Ca</font><sub>1/3-y</sub><font>Sr</font><sub>y</sub>) <font>MnO</font><sub>3</sub> FILMS

Some Unusual Behavior of Dielectric Properties of SrTiO3 Metal Organic Chemical Vapor Deposition Grown Thin Films

Growth of Srtio3(110) Film by Oxide Molecular Beam Epitaxy with Feedback Control

Surface Microstructures Of Ferroelectric Srbi2ta2o9, Batio3 And Metallic Srruo3 Epitaxial Thin Films

Epitaxial Growth of Metastable La0.67Sr0.33MnO3−δ Films by Using Sr3Al2O6 As Multifunctional Buffer Layers

Chemistry and structure of homoepitaxial SrTiO$_3$ films and their influence on oxide-heterostructure interfaces

X-Ray Analysis Of Epitaxial Pbtio3 Thin Film Grown On An (001)Srtio3 Substrate By Metal-Organic Chemical Vapour Deposition

Epitaxial Behavior And Interface Structures Of Bsto Thin Films