Abstract:Thin films of the (BaxSr1−x)TiO3 (BST) solid solution series were grown by metal-organic chemical-vapor deposition (MOCVD) on platinized silicon wafers with emphasis to (Ba0.7Sr0.3)TiO3 and SrTiO3. The nucleation behavior and the size of the stable nuclei were investigated by different scanning probe microscope techniques including local conductivity scanning. The characteristic differences were observed for different deposition temperatures, i.e., a homogeneous nucleation of small BST grains on the larger Pt grains at 565 °C and a dominating grain-boundary nucleation at 655 °C. X-ray photoelectron spectroscopy indicates a stoichiometric composition from the beginning. The microstructural evolution was investigated by high-resolution transmission electron microscopy and revealed randomly oriented grains (typical in-plane size 10–20 nm) with a high density of twins at 565 °C and (100)-oriented defect-free grains of slightly increased size at 655 °C. This remarkably stable (100) texture seems specific for MOCVD as it is not observed for other deposition methods. The grain structure and surface morphology and their dependence on film stoichiometry (group-II/Ti ratio) are investigated. The relation between the structural and the electrical properties, capacitance, and leakage current, is finally discussed.

Preparation of SrTiO3 Buffer Layers on BaxSr1−xTiO3 Seed Layers Buffered Ni Tapes by Chemical Solution Deposition

Effect of seed layers on the preparation of SrTiO3 buffer layers on Ni tapes via sol–gel method

Growth of SrTiO3 Thin Films on BaxSr1−xTiO3 (x=0.3, 0.5) Seed Layers on Ni (200) Substrates Using Spin Coating Technique

Preparation and Crystalline Qualities of SrTiO3 and CeO2 Buffer Layers Fabricated on Ni Substrates Via a Sol–gel Method for YBCO Coated Conductors

A Simple One-Step Heat Treatment Process for Preparing Biaxially Textured Buffer Layers on Rolled Ni Tape for High Tc Coated Conductors’ Application

EPITAXIAL GROWTH OF <font>SrTiO</font><sub>3</sub> THIN FILMS BY SOL-GEL SYNTHESIS ON <font>LaAlO</font><sub>3</sub> AND <font>Ni</font> SUBSTRATES

Enhanced Piezoresponse and Dielectric Properties for Ba1-XSrXTiO3 Composition Ultrathin Films by the High-Throughput Method

Preparation of SrTiO_3 buffer layers on Ni-W tapes by MOD method

Effect of Srtio3 Buffer Layers on Crystallization and Properties of Sol-Gel Derived Pb(Zr0.52ti0.48)O3 Thin Films

Effects of the TiO2 Buffer Thickness on SrTiO3 (111) Epitaxial Films Grown on GaN (0002)

BiFeO3 thin films prepared on metallic Ni tapes by chemical solution deposition: effects of annealing temperature and a La0.5Sr0.5TiO3 buffer layer on the dielectric, ferroelectric and leakage properties

Polymer-assisted chemical solution deposition for the preparation of BaZrO 3 (BZO) buffer layer for coated conductors

Effects of Ba2+/Sr2+ Ratio on the Microstructure, Dielectric and Ferroelectric Properties of Ba X Sr(1−x)TiO3 Films Prepared by Micro-Arc Oxidation

Stoichiometry control and structure evolution in hydrothermally derived (Ba,Sr)TiO3 films

The Effects of LaNiO_3 Buffer Layer on the Microstructure and Dielectric Properties of Ba_(0.5)Sr_(0.5)TiO_3 Thin Films

Hydrothermal growth of textured Ba(x)Sr(1-x)TiO3 films composed of nanowires

Preparation of NiO Buffer Layer by Direct Oxygenation of Ni Tape

Growth Characteristics of BaxSr(1−x)TiO3 Thin Films Produced by Micro-Arc Oxidation

Preparation of BaxSr1$minus;xTiO3 thin films with seeding layer by a sol?gel method

Metal-Organic Chemical-Vapor Deposition of (ba,sr)tio3: Nucleation and Growth on Pt-(111)

Preparation of Ba0.5Sr0.5TiO3 film by microarc oxidation