Abstract:Ti, Zr and Hf doped CeO2−δ films with (00l) preferred orientation have been prepared on Ni–W substrates by chemical solution deposition method. The influence of ionic radii of dopants on the epitaxial growth process and oxygen diffusion behavior of Ce0.8M0.2O2−δ (M = Ti, Zr, Hf) films were explored by X-ray diffraction and atomic force microscopy. Since the ionic radii of doping cations of Ti, Zr and Hf are smaller than that of Ce and the lattice parameter of Ni–W substrate is smaller than that of CeO2−δ film, the compressive strain exists primarily in the doped film. The doping cation with small radius leads to the small lattice parameter of CeO2−δ film and small lattice mismatch between Ni–W substrate and epitaxial film. The compressive strain decreases resulting from the elastically lattice deformation in the films, while the compressive strain leads to the increase of the growth rate for CeO2−δ grains. The results show that the doping cation with smaller ionic radius has important influence on the surface roughness and the out-of-plane texture. Moreover, binding energy of dopants and oxygen vacancies, oxygen migration energies and vacancy formation energies are related to the intrinsic oxygen diffusion coefficient of buffer layers. Ionic radius has significant effect on the migration energies of oxygen ions. The Ti doped film shows severe oxygen diffusion due to steric effects. Therefore, the selection of suitable dopants would benefit the improvement of texture and surface morphology as well as the ability against oxygen diffusion of buffer layer.

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