Epitaxial growth of Gd 2 Zr 2 O 7 /Y 2 O 3 buffer layers for YBa 2 Cu 3 O 7− δ coated conductors

y m lu,c y bai,f fan,ran zhao,z y liu,ruben huhne,b holzapfel,c b cai
DOI: https://doi.org/10.1016/j.physc.2012.09.015
2013-01-01
Abstract:A biaxial textured buffer layer architecture was developed on Ni-5 at.% W (NiW) tapes applying Y2O3 as seed layer and Gd2Zr2O7 (GZO) as barrier layer deposited by reel-to-reel DC reactive magnetron sputtering and pulsed laser deposition, respectively. X-ray diffraction measurements revealed an epitaxial growth of GZO films in a large range of substrate temperatures using Y2O3 as seed layer. The X-ray in-plane alignment of the buffer is less than 5 in-plane alignment of the buffer is less than 5 degrees. Atomic force microscopy shows a homogeneous and flat GZO layer surface with a roughness RMS of about 2.5 mu m in 5 mu m x 5 mu m area. YBa2Cu3O7 (delta) d superconducting films grown on the Gd2Zr2O7/Y2O3 buffered NiW metallic tape exhibited an inductively measured critical current density J(c) of about 0.8 MA/cm(2), demonstrating the suitability of the simplified buffer layer stack for coated conductors. (C) 2012 Elsevier B.V. All rights reserved.
What problem does this paper attempt to address?