Preparation of epitaxial La2-xGdxZr2O7 buffer layer for coated conductors using sol-gel method

Limin Li,Gaoyang Zhao,Li Lei,Fuxue Yan,Bo Deng,Jiqiang Jia,Linna Yang,Chengshan Li
DOI: https://doi.org/10.1016/j.matchemphys.2020.123147
IF: 4.778
2020-08-01
Materials Chemistry and Physics
Abstract:La2-xGdxZr2O7 (LGZO) films were prepared on Ni-5at.%W rolling-assisted biaxially textured substrate (RABiTS-NiW) using sol-gel method. The lattice parameter of lanthanum zirconate was changed by gadolinium element doping, which reduced the lattice constant of lanthanum zirconate buffer layer to have a better match with the lattice of NiW substrate. In particular, the grain growth texture of the buffer layer film has been analyzed by X-ray diffraction, EBSD, SEM and TEM. The results show that the La1.25Gd0.75Zr2O7 film has the highest c-axis preferred orientation and dense microstructure. EBSD measurement reveals that the excellent grain-growth texture is formed within La1.25Gd0.75Zr2O7 film and the most misorientation angle is around 3°. Moreover, the epitaxial growth relationship of NiW(002)//La1.25Gd0.75Zr2O7(004) as well as NiW(200)//La1.25Gd0.75Zr2O7(440) is demonstrated by atomic resolution TEM observation. By means of suitable element substitution, the La1.25Gd0.75Zr2O7 is a quite promising candidate of single-phase buffer layer between YBa2Cu3O7-x and NiW substrate.
materials science, multidisciplinary
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