Abstract:The discovery of strontium niobate (SNO) as a potentially new transparent electrode has generated much interest due to its implications in various optoelectronic devices. Pristine SNO exhibits exceptionally low resistivity (∼10−4 Ω cm) at room temperature. However, this low resistivity occurs due to large number of carrier concentration in the system, which significantly affects its optical transparency (∼40%) in the visible range and hinders its practical applications as a transparent electrode. Here, we show that modulating the growth kinetics via oxygen manipulation is a feasible approach to achieve the desired optoelectronic properties. In particular, epitaxial (001) SNO thin films are grown on (001) lanthanum aluminate by pulsed laser deposition at different oxygen partial pressures and are shown to improve the optical transparency from 40% to 72% (λ = 550 nm) at a marginal cost of electrical resistivity from 2.8 to 8.1 × 10−4 Ω cm. These changes are directly linked with the multi-valence Nb-states, as evidenced by x-ray photoelectron spectroscopy. Furthermore, the defect-engineered SNO films exhibit multiple electronic phases that include pure metallic, coexisting metal-semiconducting-like, and pure semiconducting-like phases as evidenced by low-temperature electrical transport measurements. The intriguing metal-semiconducting coexisting phase is thoroughly analyzed using both perpendicular and angle-dependent magnetoresistance measurements, further supported by a density functional theory-based first-principles study and the observed feature is explained by the quantum correction to the conductivity. Overall, this study shows an exciting avenue for altering the optical and transport properties of SNO epitaxial thin films for their practical use as a next-generation transparent electrode.

Electro-optic Properties of Epitaxial Sr0.6Ba0.4Nb2O6 Films Grown on MgO Substrates Using LixNi2-xO Buffer Layer

Measurement of transverse electro-optic coefficient of Sr 0.6Ba0.4Nb2O6 thin film grown on MgO substrate with different content of potassium ions

Fabrication and Characteristics of Sr0.6ba0.4nb2o6 Films Prepared by Pulse Laser Deposition

SrxBa1-xNb2O6 optical waveguiding thin films on SiO2 coated Si(100) substrates

Ferroelectric SrxBa1-xNb2O6 optical waveguiding thin films on SiO2-coated Si(100) substrates

Epitaxial Growth and Dielectric Properties of Pb0.4Sr0.6TiO3 Thin Films on (00L)-Oriented Metallic Li0.3Ni0.7O2 Coated MgO Substrates

Heteroepitaxial growth of Sr1.8Ca0.2NaNb5O15/Li0.25Ni0.75O/MgO by pulsed laser deposition

Pulsed laser deposition of SrxBa1-xNb2O6/MgO bilayered films on Si wafer in waveguide form

The Orientation-Selective Growth of LaNiO3 Films on Si(100) by Pulsed Laser Deposition Using a MgO Buffer

Completely (001)-textured growth and electrical properties of Bi4Ti3O12/LaNiO3 heterostructures prepared by pulsed laser deposition on LaAlO3 single crystal substrates

Effects of Sr0.6ba0.4nb2o6 Self-Template Layer on the Structural Properties of Sol-Gel Derived Sr0.6ba0.4nb2o6 Films

Growth of ferroelectric (K0.5Na0.5)0.2(Sr0.75Ba0.25)0.9Nb2O6 thin films by fulsed laser deposition

Modulation of the optical and transport properties of epitaxial SrNbO3 thin films by defect engineering

Prepared by PLD and Optical Properties of Sr_(0.75)Ba_(0.25)Nb_2O_6 Thin Films

Pulsed Laser Deposition of /mgo Bilayered Films on Si Wafer in Waveguide Form

Pulsed Laser Deposition of LaNiO3 and YBa2Cu3O7−δ/LaNiO3 on SrTiO3 Buffered (100) MgO

Optical Transmission and Carrier Transport of Epitaxial (001)- and (111)-Oriented Ba0.96La0.04SnO3 Thin Films

Growth of orientation-controlled Pb(Mg,Nb)O 3 -PbTiO 3 thin films on Si(100) by using oriented MgO films as buffers

In-situ Poling of Lithium Niobate Films on Silicon Wafer by Applying a Low Electric Field During Pulsed Laser Deposition

Development of a new family of hole transport semiconductor oxides for fully transparent optoelectronic devices