Completely (001)-textured growth and electrical properties of Bi4Ti3O12/LaNiO3 heterostructures prepared by pulsed laser deposition on LaAlO3 single crystal substrates

X. J. Zhang,S. T. Zhang,Y. F. Chen,Z. G. Liu,N. B. Ming

DOI: https://doi.org/10.1016/S0167-9317(02)00990-5

IF: 2.3

2003-01-01

Microelectronic Engineering

Abstract:Heterostructures of Bi4Ti3O12(BTO)/LaNiO3(LNO) have been prepared on (001) LaAlO3 single crystal substrates by pulsed laser deposition (PLD). Analyses of X-ray diffraction (XRD), (including θ-2θ scan, rocking curve), atomic force microscopy (AFM) and scanning electron microscopy (SEM) reveal that the high quality LNO and BTO films are completely c-axis oriented. With Pt top electrodes, the BTO films exhibit a highly insulative characteristic of low leakage current (∼10-7 A/cm2 at an applied voltage of 6 V) and excellent dielectric properties. At 100 kHz, the dielectric constant and dielectric loss are 238 and 0.033, respectively. Also a well symmetric ferroelectric hysteresis loop is observed with remnant polarization Pr of 4.5 µC/cm2 and coercive field Ec of 72.5 kV/cm. Our experiments confirm that the use of the LNO as an electrode material can reduce the amount of the interfacial charges, and thus remove the imprint failure due to thermal processes.