Conductive Lanio3 Electrode Grown by Pulsed Laser Ablation on Si Substrate

Sun Li,Yu Tao,Chen Yan-Feng,Zhou Jun,Ming Nai-Ben
DOI: https://doi.org/10.1557/jmr.1997.0133
1997-01-01
Abstract:Using the pulsed laser ablation (PLA) technique, conductive LaNiO3 thin films have been successfully grown on (001) Si substrates. The XRD θ-2θ scan patterns indicate a preferential (110) orientation, and the electron probe microanalyzer (EPMA) investigations show that the three elements La, Ni, and O distribute uniformly in the films. The resistivity of the as-deposited LaNiO3 films display a metallic character. Polycrystalline PbTiO3films are deposited by metalorganic chemical vapor deposition (MOCVD) on these LaNiO3 electrodes. Ferroelectricity measurements of the PbTiO3/LaNiO3 heterostructure prove LaNiO3 to be a promising electrode material in the integration of ferroelectrics and Si wafer.
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