Fabrication of Lead Iron Niobate Films on Si Substrate by Pulsed Laser Deposition

Xinrong Wang,Shoushan Fan,Qunqing Li,Binglin Gu,Xiaowen Zhang
DOI: https://doi.org/10.1143/JJAP.35.L1002
1996-01-01
Abstract:Ferroelectric Pb(Fe1/2Nb1/2)O-3 (PFN) films were heteroepitaxially grown on Si (100) substrates by pulsed laser deposition. The optimum conditions to form the (100) oriented PFN perovskite phase were at a substrate temperature of 700 degrees C with an oxygen pressure of 200 m Torr. The Pb content in the target was found to be essential to the formation of the perovskite phase in PFN films. Heterostructures consisting of PFN/La0.5Sr0.5CoO3 (LSCO) films were prepared on Si (100) substrates to evaluate the dielectric and ferroelectric properties of the films. Ferroelectricity in these films was confirmed by the presence of hysteresis loops, with a remnant polarization of 0.2 mu C/cm(2) and coercive held of 5.12 kV/cm. The room-temperature dielectric constant measured at 10 kHz was 194 and the dissipation factor was 0.7.
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