Abstract:By Sol-Gel method,conductive LaNiO3 thin films are prepared on Si(100),SiO2/Si,and Pt/Ti substrates using rapid thermal annealing,then PZT ferroelectric thin films deposit on LNO/Si and Pt/Ti substrates.The microstructure of the thin films has been investigated by X-ray diffraction(XRD).Surface morphologies are determined by Atomic Force Microscope(AFM).Energy Dispersive Spectrometer(EDS) results can tell us the component message on different films.Properties of PZT thin films are determined by XRD and the curve of dielectric constant and dielectric loss.Experiment results show that LNO/Si(100) multilayer thin films can get tetragonal structure,while LNO thin films deposited on SiO2/Si and Pt/Ti/SiO2/Si,pseudomorphic cubic phase.AFM appears conductive electric thin films deposited on Si(100) have a smooth,dense,and crack-free surface morphology,So LNO/Si(100) thin films can be used as substrate to deposite PZT ferroelelctic thin film.PZT thin films can get perovskite structure on LNO and Pt/Ti,the intensity of X-ray peak of PZT/LNO are higher than that of LNO/Pt/Ti.The dielectric constant and the dielectric loss of PZT thin films deposited on Pt/Ti are lower than those of LNO.At 100 kHz,the dielectric constant and the dielectric loss of PZT on LNO and Pt/Ti are 562,0.29;408,0.037 respectively.

Growth and Ferroelectric Properties of Sol-Gel Derived (pbla) Tio3 Films on Metallic Lanio3-Coated Substrates

Growth and Ferroelectric Study of Bi3.25La0.75Ti3O12 Thin Films on Different Substrates

Ferroelectric Properties of Bi3.25la0.75ti3o12 Thin Films Grown on the Highly Oriented Lanio3 Buffered Pt/Ti/Sio2/Si Substrates

(Pb,la)(zr,sn,ti)o-3 Antiferroelectric Thin Films Grown on Lanio3-Buffered and Pt-Buffered Silicon Substrates by Sol-Gel Processing

Ferroelectric properties of Bi 3 . 25 La 0 . 75 Ti 3 O 12 thin films grown on the highly oriented LaNiO 3 buffered Pt Õ Ti Õ SiO 2 Õ Si substrates

Metal-organic Chemical Liquid Deposited (110)-Preferred LaNiO3 Buffer Layer for Pb0.97La0.02(Zr0.85Sn0.13Ti0.02)O3 Antiferroelectric Films

Improved Dielectric Properties of (110)-Preferred (pb, La) (zr, Sn, Ti)O-3 Antiferroelectric Thin Films on Metalorganic Decomposition-Derived Lanio3 Buffer Layer

Low-temperature growth of (110)-preferred Pb0.97La0.02(Zr0.88Sn0.10Ti0.02)O3 antiferroelectric thin films on LaNiO3/Si substrate

Structural and Electrical Properties of PbTiO3 Thin Films on Conductive Oxide LaNiO3 Coated Si Substrates Prepared by Sol–gel Method

Phase transformation behavior of (Pb,La)(Zr,Sn,Ti)O 3 and Pb (Nb,Zr,Sn,Ti)O 3 antiferroelectric thin films deposited on LaNiO 3 -buffered silicon substrates by sol-gel processing

Structure and Properties of Sol-Gel Processed (pb,la)tio3 Ferroelectric Thin Films

The electrical properties and phase transformation of PLZST 2/85/13/2 antiferroelectric thin films on different bottom electrode

Preparation of Epitaxial Metallic LaNiO3 Films on SrTiO3 by Metalorganic Decomposition for the Oriented Growth of PbTiO3

Characterization of Conductive LaNiO3 Thin Films on Different Substrates by Sol-Gel

Dielectric and Ferroelectric Properties of Highly Oriented (Pb,nb)(zr,sn,ti)o-3 Thin Films Grown by A Sol-Gel Process

Preparation of Highly (111)-Oriented (Pb,la)(zr,sn,ti)o-3 (plzst) Antiferroelectric Thin Films by Modified Sol-Gel Process Using A Novel Tin Source, Dibutyloxide of Tin

Improved Electrical Properties of (pb, La)Tio3 Thin Films Using Compositionally and Structurally Compatible Lanio3 Thin Films As Bottom Electrodes

Epitaxial Plt Thin Films Prepared by A Sol-Gel Process

Influence of different bottom electrodes to microstructure and electrical properties of Pb(Zr0.52Ti0.48)O3 ferroelectric films

La-modified PbTiO3 Ferroelectric Thin Films Prepared by Sol-Gel Process

Preparation and Study on Epitaxial Pb(Zr0.52ti0.48)O-3 Ferroelectric Films on Different Substrates