Epitaxial Plt Thin Films Prepared by A Sol-Gel Process

QF Zhou,HLW Chan,QQ Zhang,CL Choy
DOI: https://doi.org/10.1080/00150199908015770
1999-01-01
Ferroelectrics
Abstract:Lead lanthanum titanate (PLT) ferroelectric thin films with (001) orientation have been epitaxially grown on La0.5Sr0.5CoO3(LSCO)/LaALO(3)(LAO) substrates by a sol-gel process followed by rapid annealing at 650 degreesC. PLT(111) films have also been successfully prepared on Pt(111)Ti/SiO2/Si substrates. 2 theta scans, phi scans and rocking curves obtained in x-ray diffraction measurements reveal the high epitaxy of these films. The PLT (111) films exhibit good dielectric and ferroelectric properties and may be useful as infrared sensors.
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