Formation of the ferroelectric domains in epitaxial PbTiO3 thin films grown by metalorganic chemical vapor deposition

Y.-F. Chen,L. Sun,T. Yu,J.-X. Chen,N.-B. Ming,X.-M. Jiang,L.-S. Xiu

DOI: https://doi.org/10.1007/s003390050543

1997-01-01

Applied Physics A

Abstract:3 thin films have been prepared by metalorganic chemical vapor deposition under reduced pressure. The formation of ferroelectric domains in films grown on SrTiO 3 and LaAlO 3 substrates was investigated by synchrotron radiation and Rutherford backscattering spectroscopy. Single-domain (3000-Å thick) and multi-domain (4500-Å thick) PbTiO 3 films were produced on SrTiO 3 . For multi-domain PbTiO 3 film, the c-domain presented epitaxial structure with its c-axis perpendicular to the substrate surface, while a-domains aligned four-fold symmetrically with c-domains by 2.79 ° off the c-axis of c-domains. In the film, the measured lattice constants (a, b and c) of the a- and c-domains were different from each other, indicating that the films suffered a modulated strain during domain formation. In contrast, both the a and c domains of films on LaAlO 3 were alternatively aligned on substrate with the a-axis of the a-domain and the c-axis of c-domains perpendicular to the substrate surface. Two-dimensional distribution of these domains is proposed and the formation of these kinds of domains is discussed. The surface morphology and phase transition process of single and multi domain PbTiO 3 film on SrTiO 3 were studied by atomic force microscope (AFM) and high temperature X-ray diffraction, respectively.