Epitaxial Growth of Pbtio3 Thin Film on (110)ndgao3 Substrate by Metalorganic Chemical Vapor Deposition
Li Sun,Yan-Feng Chen,Lei He,Chuan-Zheng Ge,Tao Yu,Ming-Sheng Zhang,Nai-Ben Ming,De-Sheng Ding,Yin-Chuan Chang
DOI: https://doi.org/10.1007/s002570050315
1997-01-01
Abstract:(001) preferentially oriented PbTiO 3 thin films have been grown on (110) NdGaO 3 substrates by metalorganic chemical vapor deposition (MOCVD) under reduced pressure at 650°C. Atomic force microscopy (AFM) surface morphology of the as-deposited film showed the evidence of layer-by-layer growth in the MOCVD process. By using a grazing-angle scattering technique, a highly resolved Raman spectrum of the epitaxial PbTiO 3 thin film on perovskite substrate was first time recorded. Other microstructure of the film, such as the element composition, the c-domain percentage and the epitaxial nature, were investigated by Rutherford backscattering spectrometry (RBS), x-ray θ − 2 θ diffraction patterns and x-ray φ scans, respectively. All measurements indicate that NdGaO 3 single crystal, which used to be a substrate for the growth of high-T c superconducting thin films, is also suitable for the growth of high quality PbTiO 3 thin film. This indicates the promising use of the NdGaO 3 for the integration of ferroelectric thin films and superconducting electrodes.