Abstract:This work presents a notable electro‐optic (EO) coefficient of up to 286 pm V−1 stemming from domain engineering in epitaxial BaTiO3 (BTO) thin films. In situ domain dynamics in BTO films are analyzed by the Second Harmonic Generation optical probe. These findings provide insights into the contribution of domain variants to the EO response and promote the development of silicon‐based heterogeneously integrated devices. In silicon photonics, BaTiO3 (BTO) emerges as a promising electro‐optic (EO) integrated material due to its excellent EO modulation capabilities. Nevertheless, the EO response of multi‐domain BTO thin films tends to be lower than that of bulk materials. BTO thin films are fabricated with strong EO responses utilizing the pulsed laser deposition technique. Considering the importance of the SrTiO3 (STO) buffer layer, a series of epitaxial BTO thin films are deposited on STO substrates with engineered domain alignment. Given the contribution of domain variants in BTO thin films to their EO response, specific electrode patterns are designed to enhance their performance. An effective Pockels coefficient of 286 pm V−1 is determined for the BTO thin film via the transmission geometry method, which surpasses recent reports. Through domain engineering in the BTO thin film, the remarkable enhancement in the EO response arising from in‐plane polarization (a‐axis) characteristics is confirmed. Simultaneously, utilizing the Second Harmonic Generation (SHG) optical probe, deep exploration into the domain dynamics within BTO thin films is conducted. These findings provide insights into the contribution of domain variants to the EO response and shed light on further developing silicon‐based heterogeneously integrated devices.

Design and Preparation of Stress-Free Epitaxial BaTiO3 Polydomain Films by RF Magnetron Sputtering.

Formation of the ferroelectric domains in epitaxial PbTiO3 thin films grown by metalorganic chemical vapor deposition

Giant Uniaxial Strain Ferroelectric Domain Tuning in Freestanding PbTiO3 Films

Manipulation of phase transitions and electrical properties of Ba<sub>1-x</sub>Sr<sub>x</sub>TiO<sub>3</sub> thin films through orientation engineering

In-plane quasi-single-domain BaTiO3 via interfacial symmetry engineering

In-plane quasi-single-domain BaTiO$_3$ via interfacial symmetry engineering

Enhanced Electro‐Optic Coefficients in Single‐Crystalline BaTiO3 Thin Films Enabled by Domain Alignment

Domain structures of BaTiO<sub>3</sub>in epitaxial BaTiO<sub>3</sub>/(NiFe<sub>2</sub>O<sub>4</sub>/BaTiO<sub>3</sub>)<sub><i>m</i></sub>/SrTiO<sub>3</sub>multilayer films

Domain Configuration and Dielectric Properties of Ba0.6Sr0.4TiO3 Thin Films

Ferroelectric Domain Structure Evolution In Ba(Zr0.1ti0.9)O-3/(Ba0.75ca0.25)Tio3 Heterostructures

Space-charge dominated epitaxial BaTiO 3 heterostructures

Thickness-dependent A/a Domain Evolution in Ferroelectric PbTiO3 Films

Single-Crystalline, Single-Domain Epitaxy of Pbtio3 Thin-Films by Metalorganic Chemical-Vapor-Deposition

Self-Organized Ferroelastic Superdomains with Enhanced Piezoresponse in (101)-Oriented Pb(Zr 0.2 ,Ti 0.8 )O 3 Thin Films

Ferroelectric Batio3 Thin Films on Ti Substrate Fabricated Using Pulsed-Laser Deposition

Domain structures of PbTiO3 and Pb(Zr,Ti)O3 thin films controlled by tensile strain induced by a Sr(Zr,Ti)O3 buffer layer

Tuning the Electro‐Optic Properties of BaTiO3 Epitaxial Thin Films Via Buffer Layer‐Controlled Polarization Rotation Paths

Thermodynamic theory of epitaxial ferroelectric thin films with dense domain structures

Mixture Domain States in PbTiO3 Film with Potentials for Functional Application

Low Temperature Growth of Epitaxial Ferroelectric BaTiO3

Preparation and Microstructures of BaTi1−xZrxO3hetero-epitaxial Thin Films on SrTiO3substrates