Microstructure And Epitaxial Characteristics Of Pbtio3 Ferroelectric Thin Film On Nacl By Mocvd

Wh Ma,Q Li,Yf Chen,T Yu,Nb Ming
1995-01-01
Integrated Ferroelectrics
Abstract:Ferroelectric PbTiO3 thin films have been epitaxially grown on (100) NaCl cleavage surface by MOCVD using tetraethyllead and titanium isopropoxide as precursors. The microstructures and epitaxial characteristics of as-grown thin films were investigated by means of transmission electron microscopy. TEM studies have shown that the epitaxial thin film was highly [001] oriented and even near single-crystal epitaxy if without a small volume of 45 degrees rotated grains, the average grain size is around 1000 A. Low-angle grain boundary formed universally when islands coalesced during the early stage of epitaxial growth. A possible growth mechanism has been given to explain this epitaxial phenomenon by consideration of two-dimensional coincidence superlattice. 90 degrees ferroelectric domains were also observed both in the large matrix grains and small 45 degrees rotated grains.
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