Phase Transformation Properties of Highly (100)-Oriented Plzst 2/85/12/3 Antiferroelectric Thin Films Deposited on Nb-Srtio3 Single-Crystal Substrates

Xihong Hao,Jiwei Zhai,Zhenxing Yue,Jinbao Xu
DOI: https://doi.org/10.1111/j.1551-2916.2011.04736.x
IF: 4.186
2011-01-01
Journal of the American Ceramic Society
Abstract:In this work, (Pb0.97La0.02)(Zr0.85Sn0.12Ti0.03)O3 (PLZST 2/85/12/3) antiferroelectric (AFE) thin films with a thickness of ~700 nm were successfully fabricated on (100)‐oriented Nb–SrTiO3 single crystal via a sol–gel technique. X‐ray diffraction and scanning electron microscopy results showed that the obtained AFE films had a highly (100)‐preferred orientation and displayed a uniform surface microstructure. Electrical measurements, such as P–E loops, the electric‐field, and temperature‐dependent dielectric properties, demonstrated a mixture of AFE and FE phases in PLZST 2/85/12/3 films deposited on Nb–SrTiO3 substrates.
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