Pulsed Laser Deposition of Highly >001< Oriented (pb,la)tio/sub 3/ Thin Films on [001] LaAlO/sub 3/ Substrates

Shijiao Xiong,Z.G. Liu,X.Y. Chen,Z.M. Ye,Xu Guo,Weisheng Hu

DOI: https://doi.org/10.1109/ise.1996.578197

2002-01-01

Abstract:Ferroelectric Pb/sub 0.90/La/sub 0.10/TiO/sub 3/ (PLT10) thin films have been prepared on [001] LaAlO/sub 3/ (LAO) and on Pt coated (100) Si (Pt/Si) substrates using pulsed laser deposition (PLD). X-ray 0-20 scan and scanning electron microscopy (SEM) were used to analyze the film structure and morphology, respectively. Energy dispersive X-ray analysis (EDAX) was employed to probe the stoichiometry of the as deposited films. The ferroelectric P-E hysteresis loop was demonstrated by using a modified Sawyer-Tower circuit and the frequency dependence of the dielectric constant was measured by using an inductance-capacitance-resistance (LCR) analyzer. The effect of the dielectric buffer layer in the film on the P-E hysteresis loop was discussed.