Pulsed Laser Ablation of Epitaxial and Conductive LaNiO/sub 3/ Thin Films for Ferroelectric Device Applications

T Yu,YF Chen,L Sun,SB Xiong,HL Zhou,XY Chen,ZG Liu,NB Ming

DOI: https://doi.org/10.1109/ise.1996.578229

1996-01-01

Abstract:Epitaxial LaNiO/sub 3/ (LNO) thin films have been fabricated on [001]SrTiO/sub 3/ (STO) and [001]LaAlO/sub 3/ (LAO) single crystal substrates at 30 Pa oxygen partial pressure and 700/spl deg/C substrate temperature by pulsed laser ablation (PLA) using pulsed excimer laser. X-ray /spl theta/-2/spl theta/ scan, X-ray /spl phi/ scan were used to characterize the as-deposited LNO thin films. The resistance versus temperature of LNO/STO and LNO/LAO were performed by standard DC four point probe method. Down to 80 K the epitaxial LNO thin films showed good metallic behavior. The resistivity of epitaxial LNO thin film was 2.25/spl times/10/sup -6/ /spl Omega/.m at 300 K. Ferroelectric Pb(Zr/sub 0.53/Ti/sub 0.47/)O/sub 3/ (PZT) thin films have been grown on epitaxial LNO bottom electrodes by PLA method. The capacitance as well as the dielectric loss (tg/spl delta/) measurements of PZT thin film in the trilayer Ag/PZT/LNO/STO have been carried out using the HP 1615A Capacitance Bridge at room temperature. P-E hysteresis loop of this sample had been measured using the Sawyer-Tower circuit.